Optical properties of type-II InGaN/GaAsN/GaN quantum wells

Seoung-Hwan Park; Yong-Tak Lee; Jongwoon Park

首页> 外文期刊>Optical and quantum electronics >Optical properties of type-II InGaN/GaAsN/GaN quantum wells

【24h】

Optical properties of type-II InGaN/GaAsN/GaN quantum wells

机译：II型InGaN / GaAsN / GaN量子阱的光学性质

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Optical properties of type-II InGaN/GaNAs QW light-emitting diodes are investigated by using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The type-II InGaN/GaNAs/GaN QW structure shows much larger spontaneous emission and optical gain than that of a conventional QW structure. This can be explained by the fact that, in the case of the type-II QW structure, the effective well width is greatly reduced. A type-II QW structure shows that the peak position at a high carrier density is similar to that (530 nm) at a low carrier density. On the other hand, in the case of a conventional QW structure, the peak position is largely blueshifted at a high carrier density.

机译：利用多带有效质量理论研究了II型InGaN / GaNAs QW发光二极管的光学性能。将这些结果与常规InGaN / GaN QW结构的结果进行了比较。 II型InGaN / GaNAs / GaN QW结构显示出比常规QW结构更大的自发发射和光学增益。这可以通过以下事实来解释：在II型QW结构的情况下，有效阱宽度大大减小。 II型QW结构表明，高载流子密度处的峰位置与低载流子密度处的峰位置（530 nm）相似。另一方面，在常规的QW结构的情况下，在高载流子密度下，峰位置大大地蓝移。

著录项

来源
《Optical and quantum electronics》 |2009年第13期|P.779-785|共7页
作者
Seoung-Hwan Park; Yong-Tak Lee; Jongwoon Park;
展开▼
作者单位

Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, Korea;

Department of Information and Communications, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea;

Energy and Applied Optics Team, Gwangju Research Center, Korea Institute of Industrial Technology, Gwangju 500-480, Korea;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
InGaN; GaAsN; GaN; quantum wells; type-II; light-emitting diode;

机译：氮化镓;砷化镓氮化镓;量子阱II型发光二极管;

相似文献

外文文献
中文文献
专利

1. Optical properties of type-II InGaN/GaAsN/GaN quantum wells [J] . Seoung-Hwan Park, Yong-Tak Lee, Jongwoon Park Optical and Quantum Electronics . 2009,第11a13期

机译：II型InGaN / GaAsN / GaN量子阱的光学性质
2. Optical gain improvement in type-II InGaN/GaNSb/GaN quantum well structures composed of InGaN/and GaNSb layers [J] . Applied Physics Letters . 2010,第5期

机译：由InGaN /和GaNSb层组成的II型InGaN / GaNSb / GaN量子阱结构的光学增益提高
3. Optical gain improvement in type-II InGaN/GaNSb/GaN quantum well structures composed of InGaN/and GaNSb layers [J] . Seoung-Hwan Park, Doyeol Ahn, Bun-Hei Koo, Applied Physicsletters . 2010,第5期

机译：由InGaN /和GaNSb层组成的II型InGaN / GaNSb / GaN量子阱结构的光学增益提高
4. Optical properties of type-II InGaN/GaAsN/GaN quantum wells light-emitting diodes [C] . Park S.-H., Seo S. B., Kim J.-J., Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009 . 2009

机译：II型InGaN / GaAsN / GaN量子阱发光二极管的光学特性
5. InGaN/GaN multiple quantum well structures: Submicron structural, optical, electrical and chemical properties. [D] . Li, Ying. 2013

机译：InGaN / GaN多量子阱结构：亚微米结构，光学，电和化学性质。
6. Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells [O] . George Christian, Menno Kappers, Fabien Massabuau, 2018

机译：掺杂Si的InGaN底层对不同数量的量子阱的InGaN / GaN量子阱结构的光学性能的影响
7. Epitaxial growth and optical properties of semipolar (11(2)over-bar2) GaN and InGaN/GaN quantum wells on GaN bulk substrates [O] . Ueda M, Kojima K, Funato M, 2006

机译：GaN体衬底上的半极性（11（2）-bar2）GaN和InGaN / GaN量子阱的外延生长和光学性质

Optical properties of type-II InGaN/GaAsN/GaN quantum wells

摘要

著录项

相似文献

相关主题

期刊订阅