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Simulation and design consideration of photoresponse for HgCdTe infrared photodiodes

机译：HgCdTe红外光电二极管光响应的仿真和设计考虑

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摘要

We report on 2D numerical simulations of photoresponse characteristic for long-wavelength HgCdTe infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated. Optimal thickness of absorption layers at different absorption lengths and diffusion lengths are extracted numerically. An empirical formula is proposed to predict reasonable optimal thickness of absorption layer by theoretically analyzing its correlations with absorption lengths and diffusion lengths.
机译：我们报告了长波长HgCdTe红外光电二极管的光响应特性的二维数值模拟。已经研究了吸收层的厚度对光响应的影响。通过数值提取在不同吸收长度和扩散长度下的吸收层的最佳厚度。提出了一个经验公式，通过理论上分析吸收层与吸收长度和扩散长度的相关性，来预测吸收层的合理最佳厚度。

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  • 来源
    《Optical and quantum electronics》 |2008年第15期|1255-1260|共6页
  • 作者

    W. D. Hu; X. S. Chen; F. Yin; Z. H. Ye; C. Lin; X. N. Hu; Z. J. Quan; Z. F. Li; W. Lu;

  • 作者单位

    National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science,500 Yu Tian Road, 200083 Shanghai, China;

    National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science,500 Yu Tian Road, 200083 Shanghai, China;

    National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science,500 Yu Tian Road, 200083 Shanghai, China;

    National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science,500 Yu Tian Road, 200083 Shanghai, China;

    National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science,500 Yu Tian Road, 200083 Shanghai, China;

    National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science,500 Yu Tian Road, 200083 Shanghai, China;

    National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science,500 Yu Tian Road, 200083 Shanghai, China;

    National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science,500 Yu Tian Road, 200083 Shanghai, China;

    National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science,500 Yu Tian Road, 200083 Shanghai, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    numerical simulation; design; HgCdTe infrared photodiode; photoresponse;

    机译：数值模拟设计;HgCdTe红外光电二极管;光反应;

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