Simulations of differential gain and linewidth enhancement factor of quantum dot semiconductor lasers

Gioannini M; Sevega A; Montrosset I

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Simulations of differential gain and linewidth enhancement factor of quantum dot semiconductor lasers

机译：量子点半导体激光器的微分增益和线宽增强因子的仿真

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摘要

We present a multi-population rate equation model for the analysis of the static and dynamic characteristics of a quantum dot (QD) semiconductor laser. The model is applied to the extraction of the differential gain and linewidth enhancement factor of the QD laser simulating the same kind of experiments usually done in the laboratory. Coherently with the experimental results, we show the difference between the values of the differential parameters extracted in below and above threshold characterizations. We demonstrate that such discrepancy is due the complex dynamics of the carriers in those energy states, whose carrier concentration is not clamped by the stimulated emission process above threshold.

机译：我们提出了一种用于分析量子点（QD）半导体激光器的静态和动态特性的多种群速率方程模型。该模型适用于QD激光器的差分增益和线宽增强因子的提取，模拟了通常在实验室中进行的同类实验。与实验结果一致，我们显示了阈值以下和阈值表征中提取的差分参数值之间的差异。我们证明了这种差异是由于载流子在那些能量状态下的复杂动力学所致，其载流子浓度不受阈值以上的受激发射过程所限制。

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来源
《Optical and quantum electronics》 |2006年第6期|p. 381-394|共14页
作者
Gioannini M; Sevega A; Montrosset I;
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作者单位

Politecn Turin, Dipartimento Elettron, I-10129 Turin, Italy;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类光学;
关键词
gain; intensity and frequency response; linewidth enhancement factor; quantum dot; semiconductor laser; INJECTION; SPECTRA;

机译：增益;强度和频率响应;线宽增强因子;量子点;半导体激光器;注入;SPECTRA;

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专利

1. Gain, Index Variation, and Linewidth-Enhancement Factor in 980-nm Quantum-Well and Quantum-Dot Lasers [J] . D. Rodriguez, I. Esquivias, S. Deubert, IEEE Journal of Quantum Electronics . 2005,第2期

机译：980 nm量子阱和量子点激光器的增益，折射率变化和线宽增强因子
2. Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers [J] . A. A. Ukhanov, A. Stintz, P. G. Eliseev, Applied Physics Letters . 2004,第7期

机译：量子点和量子阱激光器中载流子诱导的折射率，增益和线宽增强因子的比较
3. Gain, differential gain and linewidth enhancement factor of GaInNAs/GaAs strained quantum well lasers [J] . Alexandropoulos D., Adams MJ. Journal of Physics. Condensed Matter . 2002,第13期

机译：GaInNAs / GaAs应变量子阱激光器的增益，差分增益和线宽增强因子
4. Differential Gain and Linewidth Enhancement Factor in GaAs based Quantum Dot Laser Diodes [C] . Kyoung Chan Kim, Il Ki Han, Young Chae Yoo, IEEE Nanotechnology Materials and Devices Conference . 2006

机译：基于GaAs的量子点激光二极管的差分增益和线宽增强因子
5. Epitaxial structure dependence of gain, refractive index, and linewidth enhancement factor in gallium arsenide and indium gallium arsenide broad-area quantum well lasers. [D] . Stohs, Jonathan. 2000

机译：砷化镓和砷化铟镓广域量子阱激光器中增益，折射率和线宽增强因子的外延结构依赖性。
6. Two-state semiconductor laser self-mixing velocimetry exploiting coupled quantum-dot emission-states: experiment simulation and theory [O] . Mariangela Gioannini, Marius Dommermuth, Lukas Drzewietzki, -1

机译：利用耦合量子点发射态的二态半导体激光自混合测速：实验仿真与理论
7. Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor [O] . J. Duan, H. Huang, D. Jung, 2018

机译：半导体量子点激光在硅外延生长，具有低线宽增强因子
8. Linewidth Enhancement Factor and Nonlinear Gain in ZnSe Semiconductor Lasers [R] . Yao, J., Agrawal, G. P., Gallion, P. 1995

机译：Znse半导体激光器中的线宽增强因子和非线性增益

Simulations of differential gain and linewidth enhancement factor of quantum dot semiconductor lasers

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