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首页> 外文期刊>Optical and quantum electronics >Physical analysis of a possibility to reach the 1.30-mu m emission from the GaAs-based VCSELs with the InGaAs/GaAs quantum-well active regions and the intentionally detuned optical cavities
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Physical analysis of a possibility to reach the 1.30-mu m emission from the GaAs-based VCSELs with the InGaAs/GaAs quantum-well active regions and the intentionally detuned optical cavities

机译：对具有InGaAs / GaAs量子阱有源区和故意失谐的光腔的基于GaAs的VCSEL达到1.30μm发射的可能性进行物理分析

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摘要

Physical aspects of an operation of the GaAs-based InGaAs/GaAs quantum-well (QW) VCSELs with the intentionally detuned optical cavities have been considered in the present paper using the comprehensive three-dimensional self-consistent optical-electrical-thermal-gain simulation. In GaAs-based structures, very good DBR resonator mirrors and a very efficient methods to confine radially both the current spreading and the electromagnetic field with the aid of oxide apertures may be applied. It has been found using the above simulation that even currently available immature technology enables manufacturing the above devices emitting radiation of wavelengths over 1.20 mu m. In particular, while the room-temperature 1.30-mu m lasing emission is still beyond possibilities of the InGaAs/GaAs QW VCSELs, these structures may offer analogous 1.25-mu m emission, especially for the high-power and/or high-temperature operation.
机译：本文使用全面的三维自洽光电热增益模拟研究了具有故意失谐光腔的基于GaAs的InGaAs / GaAs量子阱（QW）VCSEL的物理方面。在基于GaAs的结构中，可以采用非常好的DBR谐振器镜和非常有效的方法来借助于氧化物孔径向地限制电流扩展和电磁场。使用上述模拟发现，即使当前可用的不成熟技术也能够制造上述装置，其发射波长超过1.20μm的辐射。特别是，尽管室温下1.30微米的激光发射仍无法实现InGaAs / GaAs QW VCSEL的发射，但这些结构可提供类似的1.25微米发射，特别是对于高功率和/或高温操作。

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