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Effect of thickness on the optoelectronic properties of electrodeposited nanostructured SnS films

机译：厚度对电沉积纳米结构SnS薄膜光电性能的影响

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摘要

The present study focuses on the effect of film thickness on the physical properties of tin mono-sulfide (SnS) nanostructures deposited through an electrodeposition technique. The SnS films were characterized using X-ray diffraction (XRD) analysis, which confirmed the formation of polycrystalline orthorhombic SnS thin films. The crystallite size and lattice parameters were estimated from the XRD patterns. The effect of the deposition voltage on the surface morphology of the deposited films was evaluated by field emission electron microscopy (FESEM). The FESEM images revealed that the nanostructures possess plate-like and bulky pyramid morphologies. Also, optical plots of the thin films were considered, which determined the direct band gap energies of the samples as 1.42-1.50 eV. Finally, Mott-Schottky measurements indicated that the samples have p-type conductivity and the carrier concentrations of the SnS films improve with the increase of their thicknesses.
机译：本研究的重点是膜厚对通过电沉积技术沉积的单硫化锡（SnS）纳米结构的物理性能的影响。使用X射线衍射（XRD）分析对SnS薄膜进行了表征，这证实了多晶正交SnS薄膜的形成。晶体尺寸和晶格参数由XRD图谱估算。通过场发射电子显微镜（FESEM）评估沉积电压对沉积膜的表面形态的影响。 FESEM图像显示出纳米结构具有板状和大体积的金字塔形态。同样，考虑了薄膜的光学图，其将样品的直接带隙能量确定为1.42-1.50 eV。最后，Mott-Schottky测量表明样品具有p型导电性，并且SnS薄膜的载流子浓度随其厚度的增加而提高。

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