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On the reliability of pulse power saturation models for broad-area GaAs-based lasers

机译：基于广域砷化镓激光器的脉冲功率饱和模型的可靠性

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摘要

With short current pulses, GaAs-based lasers can achieve high output powers if self-heating and catastrophic optical damage are suppressed. However, the pulse power is still severely limited by internal saturation mechanisms. Over the past decade, various power loss mechanisms have been identified by numerical laser simulation but published conclusions differ even for the same laser diode. We here investigate the reliability of such simulations and find that the error range remains relatively small if all saturation mechanisms are considered simultaneously in a self-consistent model, including a realistic hole mobility. Accurate pulse power predictions are demonstrated by simulating measurements on two different laser structures without making material parameter adjustments.
机译：如果抑制自热和灾难性的光学损伤，则采用短电流脉冲，基于GaAs的激光器可以实现高输出功率。但是，脉冲功率仍然受到内部饱和机制的严重限制。在过去的十年中，通过数值激光仿真已经发现了各种功率损耗机制，但是即使对于相同的激光二极管，已发表的结论也有所不同。我们在这里研究了这种模拟的可靠性，发现如果在包括实际空穴迁移率在内的自洽模型中同时考虑所有饱和机制，则误差范围仍然相对较小。通过在两个不同的激光结构上模拟测量结果而无需进行材料参数调整，就可以证明精确的脉冲功率预测。

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