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Optimal absorber thickness in long-wave multiple-stage detector

机译：长波多级探测器的最佳吸收体厚度

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摘要

The detectivity characteristics of interband cascade infrared type-II superlattice detectors for long-wave infrared detection ((cut-off)=8m at room temperature) are discussed. We present comparison of two superlattices: InAs/GaSb and InAs/InAsSb, assuming the characteristic parametersabsorption coefficients and carrier lifetimes published in literature. Dependence of the Johnson-noise limited detectivity on the absorber thickness for a different number of stages is reported. Higher detectivity D-* value can be achieved by increasing the carrier lifetime. However, for detectors based on type-II InAs/GaSb superlattice increasing the carrier lifetime up to 25ns leads to a situation in which one stage is preferred, i.e. for detector with a single absorber, we obtain the highest detectivity value. In the case of InAs/InAsSb material, the situation is similar for 80ns. We have shown that the optimal absorber thickness at which the highest detectivity values are obtained depends not only on the absorption coefficient and the number of stages N-S, but also on the carrier diffusion length L. According to a calculations, cascade detectors based on Ga-free material should have much higher optimal absorber thicknesses than materials based on InAs/GaSb.
机译：讨论了带间级联红外Ⅱ型超晶格探测器的长波红外探测（室温下（截止）= 8m）的探测特性。我们假设文献中发表了特征参数吸收系数和载流子寿命，我们比较了两种超晶格：InAs / GaSb和InAs / InAsSb。据报道，对于不同数量的阶段，约翰逊噪声受限的检测率对吸收体厚度的依赖性。可以通过增加载流子寿命来实现更高的探测D- *值。但是，对于基于II型InAs / GaSb超晶格的探测器，将载流子寿命提高到25ns会导致一种情况是优选的，即对于具有单个吸收体的探测器，我们获得了最高的探测率值。对于InAs / InAsSb材料，情况类似，持续80ns。我们已经表明，获得最高探测值的最佳吸收体厚度不仅取决于吸收系数和级数NS，而且取决于载流子扩散长度L。根据计算，基于Ga-游离材料的最佳吸收体厚度应比基于InAs / GaSb的材料高。

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