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Effects of insertion loss, laser profile and inhomogeneity of dots distribution on properties of all-optical modulator based on GaN/AIN quantum dots

机译:插入损耗,激光轮廓和点分布的不均匀性对基于GaN / AIN量子点的全光调制器性能的影响

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This paper reports the effects of insertion loss, laser profile and inhomogeneity of dots distribution on properties of an all-optical modulator based on spherical quantum dot. The aim of this paper is to give a quantitative description for the variation of main properties of an all-optical quantum dot modulator such as, absorption, transmission and modulation depth regard to insertion loss, laser profile and inhomogeneity of dots. To realize these points, first, we extract the field distribution in optical fiber and channel waveguide (modulator) which are defined by their structure characteristics and boundary conditions. Using the electric field equations, input coupling efficiency and insertion loss and also role of laser profile are observable. Finally we investigate the effect of size distribution and inhomogeneity of quantum dots on the modulator performance. In this structure we used electromagnetically induced transparency (EIT) in GaN/AlN structure, associated with inter-sublevel transitions.
机译:本文报道了插入损耗,激光轮廓和点分布的不均匀性对基于球形量子点的全光调制器性能的影响。本文的目的是定量描述全光量子点调制器的主要特性的变化,例如吸收,透射和调制深度与插入损耗,激光轮廓和点的不均匀性有关。为了实现这些点,首先,我们提取由光纤和通道波导(调制器)的结构特性和边界条件定义的场分布。使用电场方程,可以观察到输入耦合效率和插入损耗,以及激光轮廓的作用。最后,我们研究了尺寸分布和量子点的不均匀性对调制器性能的影响。在此结构中,我们在GaN / AlN结构中使用了电磁感应的透明性(EIT),与子级间跃迁相关。

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