Research on photoelectric properties of n-GaN (0001) surface with point defects via first-principles

Ju Ying; Liu Lei; Lu Feifei

首页> 外文期刊>Optical and quantum electronics >Research on photoelectric properties of n-GaN (0001) surface with point defects via first-principles

【24h】

Research on photoelectric properties of n-GaN (0001) surface with point defects via first-principles

机译：通过第一性原理研究点缺陷n-GaN（0001）表面的光电性能

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

In order to reveal the influence of n-type doping and point defects on the electronic and optical properties of GaN (0001) surface, the pristine and defective n-GaN (0001) surface models are established. The formation energy, work function, atomic structure, electronic and optical properties of these surfaces are discussed by first-principles calculations. The results show that the defects have the strong tendency to be close to the surface position, and the N interstitial defect (N-i) and the Ga vacancy (V-Ga) are easily formed. The work function of the surface with V-Ga drops the greatest, and the conductivity of n-type increases. In addition, the absorption coefficient of the surface with various defects is smaller than that of the pristine n-type surface. The appropriate amount of Ga vacancies can increase the probability of electron emission, but it is not conducive to the absorption of photons.

机译：为了揭示n型掺杂和点缺陷对GaN（0001）表面的电子和光学性能的影响，建立了原始的和有缺陷的n-GaN（0001）表面模型。通过第一性原理计算讨论了这些表面的形成能，功函数，原子结构，电子和光学性质。结果表明，缺陷具有接近表面位置的强烈趋势，并且容易形成N间隙缺陷（N-i）和Ga空位（V-Ga）。 V-Ga表面的功函数下降最大，n型电导率增加。另外，具有各种缺陷的表面的吸收系数小于原始的n型表面的吸收系数。适当的Ga空位量可以增加电子发射的可能性，但是不利于吸收光子。

著录项

来源
《Optical and quantum electronics》 |2019年第7期|211.1-211.14|共14页
作者
Ju Ying; Liu Lei; Lu Feifei;
展开▼
作者单位

Nanjing Univ Sci & Technol, Dept Optoelect Technol, Sch Elect & Opt Engn, Nanjing 210094, Jiangsu, Peoples R China;

Nanjing Univ Sci & Technol, Dept Optoelect Technol, Sch Elect & Opt Engn, Nanjing 210094, Jiangsu, Peoples R China;

Nanjing Univ Sci & Technol, Dept Optoelect Technol, Sch Elect & Opt Engn, Nanjing 210094, Jiangsu, Peoples R China;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
n-type; GaN (0001) surface; Defect; Optical properties; First-principles;

机译：n型;GaN（0001）表面;缺陷;光学性质;第一原则;

相似文献

外文文献
中文文献
专利

1. Research on photoelectric properties of n-GaN (0001) surface with point defects via first-principles [J] . Ju Ying, Liu Lei, Lu Feifei Optical and quantum electronics . 2019,第7期

机译：N-GaN（0001）表面通过第一原理与点缺陷的光电性能研究
2. Study of electronic properties on the n-GaN (0001) surface with points defects [J] . Liu Lei, Lu Feifei, Tian Jian Applied Physics . 2019,第12期

机译：点缺陷在n-GaN（0001）表面的电子性能研究
3. First-principles investigation of structural and electronic properties of the reconstructed ZnO (0001?) and (0001) (√3 × √3) - R30° surfaces [J] . Li J.M., Li C., Wang F., Modern Physics Letters, B. Condensed Matter Physics, Statistical Physics, Applied Physics . 2010,第28期

机译：ZnO（0001？）和（0001）（√3×√3）-R30°表面的结构和电子性质的第一性原理研究
4. Electronic structure and the optical properties of GaN (0001) surface from first-principles study [C] . ZHAO Hua-xiong, GUO Zhi-you, ZENG Kun, Solar cells, solid state lighting, and information display technologies . 2009

机译：第一性原理研究GaN（0001）表面的电子结构和光学性质
5. The relationship between surface defects and surface reaction pathways on defective molybdenum sulfide(0001) single crystal surfaces. [D] . Wiegenstein, Christopher G. 1999

机译：缺陷的硫化钼（0001）单晶表面上的表面缺陷与表面反应路径之间的关系
6. The Impact of Iron Adsorption on the Electronic and Photocatalytic Properties of the Zinc Oxide (0001) Surface: A First-Principles Study [O] . Jingsi Cheng, Ping Wang, Chao Hua, 2018

机译：铁吸附对氧化锌（0001）表面电子和光催化性能的影响：第一性原理研究
7. First-Principles Calculations of the Formation and Structures of Point Defects on GaN (0001) Surface [O] . Chun Yang 2014

机译：GaN（0001）表面上点缺陷的形成和结构的第一原理计算

Research on photoelectric properties of n-GaN (0001) surface with point defects via first-principles

摘要

著录项

相似文献

相关主题

期刊订阅