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首页> 外文期刊>Optical and quantum electronics >Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions
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Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions

机译：在黑暗和光照条件下确定ITO / CZTS / CdS / Ag和ITO / CdS / CZTS / Ag异质结二极管的电参数

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摘要

In this work, ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes has been produced, CdS and CZTS thin film layers of the diode have been produced on ITO glass at room temperature using PLD technique. It has been produced CZTS thin films that have a polycrystalline structure that were annealed at the sulfurization temperatures of 325 degrees C, 350 degrees C and 375 degrees C when as-grown CZTS thin film has the amorphous structure. CdS thin films have been grown on substrate at room temperature in 15, 20 and 25 min that have polycrystalline structures. Then, CdS thin film deposited for 20 min was annealed at 200 degrees C temperature and, has better crystal structure compared to other thin films. Diodes have been composed of CZTS thin film annealed in 375 degrees C, CdS thin film was grown during 20 min and, then annealed at 200 degrees C temperature. According to J-V characteristics of diode, diodes exhibit some rectification behaviour in dark and show a photo-electric property under illumination conditions. In this article, the ideality factors of diodes in dark condition have been calculated, their electrical parameters of J(sc), V-oc, FF and eta under the illumination condition have been determined and these electrical properties have been discussed in details.
机译：在这项工作中，已经制造出ITO / CZTS / CdS / Ag和ITO / CdS / CZTS / Ag异质结二极管，并在室温下使用PLD技术在ITO玻璃上制造了二极管的CdS和CZTS薄膜层。已经生产了具有多晶结构的CZTS薄膜，当成膜的CZTS薄膜具有非晶态结构时，该多晶结构在325℃，350℃和375℃的硫化温度下退火。 CdS薄膜已在室温下于15、20和25分钟内在具有多晶结构的基板上生长。然后，将沉积20分钟的CdS薄膜在200摄氏度的温度下退火，并且与其他薄膜相比具有更好的晶体结构。二极管由在375摄氏度下退火的CZTS薄膜组成，CdS薄膜在20分钟内生长，然后在200摄氏度的温度下退火。根据二极管的J-V特性，二极管在黑暗中表现出一些整流行为，并在光照条件下表现出光电性能。在本文中，计算了在黑暗条件下二极管的理想因子，确定了它们在光照条件下的电参数J（sc），V-oc，FF和η，并对这些电性能进行了详细讨论。

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  • 来源
    《Optical and quantum electronics》 |2019年第11期|360.1-360.22|共22页
  • 作者

    Gezgin Serap Yigit; Kilic Hamdi Sukur;

  • 作者单位

    Selcuk Univ Fac Sci Dept Phys TR-42031 Selcuklu Konya Turkey;

    Selcuk Univ Fac Sci Dept Phys TR-42031 Selcuklu Konya Turkey|Selcuk Univ Directorate High Technol Res & Applicat Ctr TR-42031 Selcuklu Konya Turkey|Selcuk Univ Directorate Laser Induced Proton Therapy Applicat TR-42031 Selcuklu Konya Turkey;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Diode; CZTS; CdS; PLD; Ideality factor; Efficiency;

    机译：二极管;CZTS;硫化镉;PLD;理想因素;效率;

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