首页> 外文期刊>Optical and quantum electronics >Influence of Gaussian disorder and exponential traps on charge carriers transport and recombination in single layer polymer light-emitting diodes based on PFO as emitting layer
【24h】

Influence of Gaussian disorder and exponential traps on charge carriers transport and recombination in single layer polymer light-emitting diodes based on PFO as emitting layer

机译:高斯无序和指数陷阱对以PFO为发光层的单层聚合物发光二极管中载流子输运和复合的影响

获取原文
获取原文并翻译 | 示例
       

摘要

In this paper, we study the transport and recombination mechanisms of charge carriers in a single layer PLED device based on PFO as emitting layer with considering Gaussian disorder, exponential distribution of traps, Poole-Frankel type field dependent hopping mobility and field independent effective transport hopping energy models. For this purpose, we use the one-dimensional and time-independent drift-diffusion model for simulation of electrical and optical characteristics of the PFO based PLED devices such as current density-luminance-voltage (J-L-V), recombination rate and singlet exciton density profile in steady-state and room temperature conditions. Also, we study the influence of the characteristic temperature and density of electron traps on the performance of devices at different voltages. Another topic is analyzing the current density-voltage characteristics of uni-polar devices (hole only or electron only) by using the well known expressions for trap-limited current and space charge-limited current and comparing them with simulation results.
机译:本文在考虑高斯无序,陷阱指数分布,Poole-Frankel型场相关跳变迁移率和场独立有效传输跳变的情况下,研究了以PFO为发射层的单层PLED器件中载流子的输运和复合机理。能源模型。为此,我们使用一维且与时间无关的漂移扩散模型来仿真基于PFO的PLED器件的电学和光学特性,例如电流密度-亮度-电压(JLV),复合率和单重态激子密度分布在稳态和室温条件下。此外,我们研究了电子陷阱的特征温度和密度对不同电压下器件性能的影响。另一个主题是通过使用陷阱限制电流和空间电荷限制电流的众所周知的表达式来分析单极器件(仅空穴或仅电子)的电流密度-电压特性,并将其与仿真结果进行比较。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号