• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Optical and quantum electronics >Structural modification and bandgap tunning of cubic AIN thin film by carbon ions irradiations
【24h】

Structural modification and bandgap tunning of cubic AIN thin film by carbon ions irradiations

机译：碳离子照射立方AlN薄膜的结构改造和带隙调谐

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper deals with the 700 keV energetic Carbon (C) ions irradiations induced structrual modification and optical bandgap tunning of cubic (c) AlN thin films. MOCVD grown c-AlN thin film has been exposed to C ions at various ions fluences of 1 x 10(13), 1 x 10(14) and 1 x 10(15) ions.cm(-2). XRD patterns exhibited that films retain their cubic crystal structure after ions irradiations, indicating their structural stability against irradiation. Full width at half maximum of the XRD peaks remains almost same for pristine and irradiated films. Ions irradiations at fluence of 1 x 10(14) ions/cm(2), produces compressive stresses as observed from the shifts in (220) orientation peaks. However, its pristine position is restored with a further rise of ions fluence to 1 x 10(15) ions/cm(2), thereby relieving the induced stresses. Raman spectra also indicated that the stress produced at lower fluence are recovered with further increase of the fluence. The bandgap obtained from UV-visible optical transmission spectra also modulated with ions dose rate and is changed from 5.88 eV (for as grown) to 5.62 eV at maximum fluence.
机译：本文涉及700 kev Enolugetic Carbon（C）离子辐照诱导立方（C）AlN薄膜的结构修饰和光学带隙调整。 MOCVD生长的C-ALN薄膜已暴露于C离子的各个离子，其流量为1×10（13），1×10（14）和1×10（15）离子。（-2）。 XRD图案表现出薄膜在离子照射后保持立方晶体结构，表明它们的结构稳定性抵抗辐照。 XRD峰的半个最大宽度对于原始和辐照薄膜几乎保持不变。离子电量为1×10（14）（14）（2）的流量的照射，从（220）取向峰的换档中观察到，产生压缩应力。然而，它的原始位置恢复，进一步升高，进一步升高到1×10（15）离子/ cm（2），从而缓解诱导的应力。拉曼光谱还表明，在进一步增加的流量的增加，回收了较低流量的应力。从UV可见光透射光谱获得的带隙也用离子剂量率调节，并且从5.88eV（以生长）改变为5.62eV，最大化。

著录项

  • 来源
    《Optical and quantum electronics》 |2019年第8期|272.1-272.9|共9页
  • 作者

    Khan Shakil; Ahmad Ishaq; Hassan Raza M.; Khizar-ul-Haq; Zhao Ting-kai; Ezema Fabian I.;

  • 作者单位

    Pakistan Inst Engn & Appl Sci Dept Met & Mat Engn Islamabad Pakistan;

    Quaid I Azam Univ Natl Ctr Phys Expt Phys Lab Islamabad 45320 Pakistan|Northwestern Polytech Univ NPU NCP Joint Int Res Ctr Adv Nanomat & Defects E Xian 710072 Shaanxi Peoples R China;

    Mirpur Univ Sci & Technol Fac Sci Dept Phys Mirpur AJ&K Pakistan;

    Mirpur Univ Sci & Technol Fac Sci Dept Phys Mirpur AJ&K Pakistan;

    Northwestern Polytech Univ NPU NCP Joint Int Res Ctr Adv Nanomat & Defects E Xian 710072 Shaanxi Peoples R China|Northwestern Polytech Univ Sch Mat Sci & Engn Xian 710072 Shaanxi Peoples R China;

    Univ Nigeria Dept Phys & Astron Nsukka 410001 Enugu State Nigeria|Univ South Africa Coll Grad Studies UNESCO UNISA Africa Chair Nanosci Nanotechnol Pretoria South Africa;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    AlN; Ion irradiation; XRD; Raman spectroscopy;

    机译：ALN;离子照射;XRD;拉曼光谱;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号