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首页> 外文期刊>Optical and quantum electronics >Properties investigation of crystalline silicon surface irradiated by nanosecond laser pulses in different background atmospheres
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Properties investigation of crystalline silicon surface irradiated by nanosecond laser pulses in different background atmospheres

机译：纳秒激光脉冲在不同背景气氛中照射晶体硅表面的特性研究

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摘要

Black silicon materials were obtained by irradiation with ns laser pulses in different ambient atmospheres. The surface morphology, optical properties, and electrical properties of the black silicon were investigated after the ablation by ns laser pulses. Slab-like structures and boundaries were formed on the surface of black silicon fabricated in sulfur hexafluor-ide (SF_6), argon (Ar), and vacuum. In addition, a micrometer-sized sphere was observed at the tip of the slab-like structure, which was not obvious for the black silicon prepared in oxygen (O_2), nitrogen (N_2), and air. The infrared absorption of all the black silicon materials was enhanced. For the two samples fabricated in SF_6 and Ar, the infrared absorptance was approximately 50% at 1500 nm. A post-thermal annealing process decreased the infrared absorptance of all the black silicon materials except for that prepared in SF_6. The sheet resistance of the black silicon was reduced by the ns laser irradiation process, and thermal annealing further decreased the sheet resistance of all the samples except for the one fabricated in SF_6. After annealing at 875 K, the sheet carrier density of the black silicon fabricated in an Ar atmosphere and vacuum was approximately 10~(13) cm~(-2), which was approximately three orders of magnitude larger than that of the silicon substrate (10~(10) cm~(-2)). The large difference in carrier density between the black silicon layer and substrate is beneficial for establishing contact junctions and for application in infrared photodetection.
机译：通过在不同的环境气氛中用NS激光脉冲照射黑色硅材料。在通过NS激光脉冲消融之后研究了黑色硅的表面形态，光学性质和电性能。在六氟-IDE（SF_6），氩气（AR）和真空中制造的黑色硅表面上形成板状结构和边界。另外，在板状结构的尖端观察到微米尺寸的球体，其对于在氧（O_2），氮（N_2）和空气中制备的黑色硅并不明显。提高了所有黑色硅材料的红外吸收。对于在SF_6和AR中制造的两个样品，红外吸收率约为1500nm。后热退火过程降低了除了在SF_6中制备的所有黑色硅材料的红外吸收率。通过NS激光照射过程降低了黑色硅的薄层电阻，除了在SF_6中制造的薄片输出进一步降低了所有样品的薄层电阻。在875 k下退火后，在AR气氛和真空中制造的黑色硅的片材载体密度约为10〜（13 )cm〜（-2），其大约比硅衬底大约三个数量级（ 10〜（10）cm〜（-2））。黑色硅层和衬底之间的载流子密度的差异是有利于建立接触结和在红外光电检测中的应用。

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  • 来源
    《Optical and quantum electronics》 |2020年第9期|390.1-390.10|共10页
  • 作者

    Ji-Hong Zhao; Yang Yang; Chao Li;

  • 作者单位

    State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University 2699 Qianjin Street Changchun 130012 China;

    State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University 2699 Qianjin Street Changchun 130012 China;

    State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University 2699 Qianjin Street Changchun 130012 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Silicon; Nanosecond laser; Infrared absorption; Atmosphere;

    机译：硅;纳秒激光;红外吸收;气氛;

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