Investigation of thermal annealing effects on MoO_3 thin film by atomic layer deposition

Mustafa Demirtas

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Investigation of thermal annealing effects on MoO_3 thin film by atomic layer deposition

机译：原子层沉积MOO_3薄膜热退火效应的研究

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Molybdenum oxide (MoO_3) thin films have been obtained by plasma-enhanced atomic layer deposition using precursors of Mo(CO)_6 and O_2 plasma at a reactor temperature of 160 °C. The MoO_3 thin films deposited on p-type silicon substrates with thermally grown 300 nm thick SiO_2 layer with different numbers of ALD growth cycles. Spectroscopic ellipsometer is used to characterize as-grown film thickness and refractive index. The as-grown films are treated at annealing temperatures at 300-600 °C. The structural properties of as-grown and annealed thin films have been characterized by optical microscopy, μRaman spectra, and atomic force microscopy.

机译：通过在160℃的反应器温度下使用Mo（CO）_6和O_2等离子体的前体，通过等离子体增强的原子层沉积获得氧化钼（MOO_3）薄膜。 MOO_3薄膜沉积在p型硅基衬底上，具有不同数量的ALD生长循环的热生长300nm厚的SiO_2层。光谱椭圆仪用于表征出生膜厚度和折射率。在300-600℃的退火温度下处理出生长的薄膜。通过光学显微镜，μraman光谱和原子力显微镜表征出生长和退火薄膜的结构性质。

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来源
《Optical and quantum electronics》 |2021年第2期|79.1-79.13|共13页
作者
Mustafa Demirtas;
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作者单位

Department of Electrical and Electronics Engineering Faculty of Engineering Samsun University Ondokuzmayis / Samsun 55420 Turkey;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Transition metal oxide; Plasma enhanced atomic layer deposition; Raman spectroscopy; Spectroscopic ellipsometry; Atomic force microscopy;

机译：过渡金属氧化物;等离子体增强原子层沉积;拉曼光谱;光谱椭圆形测定法;原子力显微镜;

Investigation of thermal annealing effects on MoO_3 thin film by atomic layer deposition

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