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Numerical modelling of ion-migration caused hysteresis in perovskite solar cells

机译：离子迁移的数值模拟在钙钛矿太阳能电池中引起的滞后

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We presented one dimensional defect model to simulate hysteresis in perovskite solar cells. It can be numerically simulated in perovskite devices with p~+-i-n~+ configuration by considering ions migration under influence of different voltage biasing. The availability of mobile ion which contribute towards ion migration, ion accumulation at interfaces and near interface regions are observed to be generating Ⅰ-Ⅴ hysteresis in simulations. To simulate ion migration under positive poling we have taken a defect model and reverse the defect polarity for simulating ion migration under negative poling. The hysteresis is observed when the device has either of the condition (a) defects at the interfacial traps at the junction, or (b) defects in p~+ or n~+ layer in vicinity of the interface region. Both the conditions have yielded Ⅰ-Ⅴ hysteresis when we switched polarity of defect to simulate positive and negative poling. This study brings out the prominent role of mobile ions and carrier dynamics in controlling device working. Band diagram and capacitance variation visibly showed the impacts of charge reversal and capacitance simulations of perovskite device. 1D modelling shows that the ionic migration is one of the responsible mechanisms behind the Ⅰ-Ⅴ hysteresis in the perovskite solar cell devices.
机译：我们介绍了一维缺陷模型，以模拟钙钛矿太阳能电池滞后。通过考虑在不同电压偏置的影响下，通过考虑离子迁移，可以用P + -i-n〜+配置在数值上模拟。往离子迁移有助于离子迁移的移动离子的可用性，在界面处的离子积聚和接近接口区域进行近的界面区域。在模拟中产生Ⅰ-ⅴ滞后。为了在正极下模拟离子迁移，我们已经采取了缺陷模型并反转了在负极抛光下模拟离子迁移的缺陷极性。当该装置具有在接合点处的接合阱处的界面阱处的条件（a）缺陷中的任何一个条件（a）缺陷时，或在接口区域附近的p〜+或n〜+层中的缺陷。当我们切换缺陷的极性时，这两个条件都产生了Ⅰ-ⅴ滞后，以模拟正负抛光。本研究提出了移动离子和载体动力学在控制设备工作中的突出作用。带状图和电容变化明显显示了电荷反转和电容模拟钙钛矿装置的影响。图1D建模表明离子迁移是Ⅰ-Ⅳ滞后后面的负责机制之一。

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