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Si-based photodiode and material characterization of TiO_2 thin film

机译：基于SI的光电二极管和TiO_2薄膜的材料表征

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摘要

This study proposes a different technique known as the thermionic vacuum arc to produce a TiO_2/Si heterojunction photodiode with better electrical properties than literature like the ideality factor indicating that the method is very suitable to form an outstanding quality heterojunction interface. The heterojunction is highly sensitive to different light intensities and has stable photocurrent characteristics as a photodiode. Structural and morphological properties of the produced TiO_2/Si heterostructure surfaces were investigated via XRD and AFM, respectively. According to XRD analysis, it was observed that the TiO_2 thin film was in a polycrystalline structure with the Anatase and Brookite phases. Also, the film surface is homogenous, and a low roughness value was measured as 3 nm. The thin film thickness and the bandgap values (E_g) were determined based on optical methods. The electrical parameters of TiO_2 thin film, such as conductivity type, charge carrier density, and mobility, were also determined by Hall Effect Measurement. The Ag/TiO2/Si/Ag heterojunction device characteristics were determined by conducting the current-voltage (Ⅰ-Ⅴ) measurement. The ideality factor (n) and the barrier height (Φ_b) values were determined as 1.7 and 0.65 eV, respectively. The photo-response performance was measured via transient photo-current (I-T) measurements for different light intensities.
机译：该研究提出了一种不同的技术，称为热离子真空电弧，以产生TiO_2 / Si异质结光电二极管，其具有更好的电性能，而不是理想因素，表明该方法非常适合形成优质的异质结界面。异质结对不同的光强度非常敏感，并且具有稳定的光电流特性作为光电二极管。分别通过XRD和AFM研究产生的TiO_2 / Si异质结构表面的结构和形态学性质。根据XRD分析，观察到TiO_2薄膜是具有锐钛矿和Brouglite阶段的多晶结构。而且，膜表面是均匀的，并且测量低粗糙度值为3nm。基于光学方法测定薄膜厚度和带隙值（E_G）。 TiO_2薄膜的电气参数，例如电导率类型，电荷载体密度和迁移率，也通过霍尔效应测量确定。通过进行电流 - 电压（Ⅰ-Ⅵ）测量来确定AG / TiO2 / Si / Ag异质结装置特性。理想因子（n）和阻挡高度（φ_b）值分别确定为1.7和0.65eV。通过用于不同光强度的瞬态光电流（I-T）测量来测量光响应性能。

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  • 来源
    《Optical and quantum electronics》 |2021年第5期|248.1-248.16|共16页
  • 作者

    Hueseyin Kaan Kaplan; Ali Olkun; Sertan Kemal Akay; Suat Pat;

  • 作者单位

    Department of Physics Faculty of Arts and Sciences Bursa Uludag University 16059 Goeruekle Bursa Turkey;

    Department of Physics Faculty of Arts and Sciences Bursa Uludag University 16059 Goeruekle Bursa Turkey;

    Department of Physics Faculty of Arts and Sciences Bursa Uludag University 16059 Goeruekle Bursa Turkey;

    Physics Department Eskisehir Osmangazi University 26480 Eskisehir Turkey;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    TiO_2; Heterojunction diode; Photodiode; Thermionic vacuum arc; Thin film;

    机译：tio_2;异结二极管;光电二极管;热离子真空弧;薄膜;

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