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首页> 外文期刊>Optical and quantum electronics >The role of spontaneous and piezoelectric polarization fields on the spectral and power characteristics of In_xGa_(1-x)N/GaN superluminescent light emitting diodes
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The role of spontaneous and piezoelectric polarization fields on the spectral and power characteristics of In_xGa_(1-x)N/GaN superluminescent light emitting diodes

机译：自发性和压电偏振场在in_xga_（1-x）n / gaN超发光发光二极管的光谱和功率特性上的作用

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摘要

The output characteristics of In_xGa_(1-x)N/GaN MQW blue SLEDs are investigated using a detailed theoretical model, in which the effects of spontaneous and piezoelectric polarizations are fully considered. By solving the Schrodinger equation in effective mass approximation, Poisson's equation, and two level rate equations with no-k selection wavelength dependent gain self-consistently, the influence of these internal fields on the electrical and optical characteristics of MQW SLEDs under bias conditions have been studied. The spontaneous polarization and the piezoelectric polarization changed with indium molarity in our structure at 2.9-3.2 V biased voltages. Below 3.05 V the blue shift of peaks due to band filing and screening of QCSE, and above 3.05 V red shifting due to device heating are seen obviously. With increasing of indium content and polarization fields accordingly in different modeled SLDs, peaks of spectral radiation power were dropped and diagrams were red shifted at the range of 3.0-4.0 nm under various applied voltages. FWHM of modeled devices raises- 0.3-0.4 nm with 1% indium content increasing (0.1356 MV/cm polarization field) in three different SLDs with 19.5%, 20%, and 20.5% indium in QWs. Total light output power of SLDs at 3.2 V dropped 6.22% (7.08 mW) with 1% indium content increasing (according to 0.1356 MV/cm total polarization field).
机译：使用详细的理论模型研究了IN_XGA_（1-X）N / GAN MQW蓝色SLED的输出特性，其中完全考虑自发和压电偏振的效果。通过求解有效质量近似，泊松等式的Schrodinger方程，以及没有-K选择波长依赖性增益的两个电平速率方程，这些内部场对偏差条件下的MQW SLIDS的电气和光学特性的影响研究过。自发极化和压电偏振在我们的结构中以2.9-3.2V偏置电压的结构而改变。低于3.05 v由于带滤波和筛选引起的峰值的蓝色偏移，并且显然可以看到由于设备加热引起的3.05 V红色移位。随着在不同建模的SLD中相应地增加铟含量和偏振场，散落光谱辐射功率的峰值，并且在各种施加的电压下，红色在3.0-4.0nm的范围内移位。模型装置的FWHM在三种不同SLD中增加了1％铟含量增加（0.1356mV / cm偏振场），QWS中的19.5％，20％和20.5％铟。 SLD的总光输出功率为3.2V下降6.22％（7.08mW），增加1％铟含量增加（根据0.1356 mV / cm总偏振场）。

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