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Synthesis, characterization, and electrical properties of CuInGaSe_2/SiO_2/n-Si structure

机译：Cuingase_2 / SiO_2 / N-Si结构的合成，表征和电性能

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摘要

The current work presents a novel structure of epitaxially grown CuInGaSe_2/SiO_2 on n-Si substrate using the liquid phase epitaxy (LPE) technique. The electrical and dielectric properties of quaternary alloy CuInGaSe_2/SiO_2/n-Si were investigated as a Schottky barrier device. The effect of temperature, voltage, and frequency on the electric and dielectric parameters such as dielectric constant ε', dielectric loss e", dielectric loss tangent tan5, the real and imaginary part of modulus M', M", ac conductivity σac and series resistance Rs were studied by measuring the capacitance-voltage within the temperature range of (303-393 K) and DC voltage range (±5 V). Both capacitance and conductance were highly affected by varying voltage, frequency, and temperature. Remarkably, capacitance has positive values at high frequencies while it takes negative values at low frequencies. The negative capacitance (NC) was observed for all temperatures. The thickness of the oxide layer was 84 × 10~(-9) nm. The density of states Nss, Ideality factor, series resistance, shunt resistance, and barrier height were assessed. The impedance spectrum investigation was tailored by suitable equal circuits comprising the contributions of grain and grain boundaries in the conduction mechanism.
机译：当前工作呈现了使用液相外延（LPE）技术在N-Si衬底上的外延生长的Cuchase_2 / SiO_2的新结构。研究了季合金Cucingase_2 / SiO_2 / N-Si的电气和介电性能作为肖特基势垒装置。温度，电压和频率对电介质恒定ε'，介电损耗E“，介电损耗切线Tan5，模量M'，M”，AC电导率σAc和系列的实模和虚部通过测量（303-393 k）和直流电压范围（±5V）的温度范围内的电容电压研究电阻Rs。电容和电导都受到不同电压，频率和温度的高度影响。值得注意的是，电容在高频处具有正值，而在低频下需要负值。为所有温度观察到负电容（NC）。氧化物层的厚度为84×10〜（-9）nm。评估了各种NSS，理想因子，串联电阻，分流性和屏障高度的密度。通过合适的等电路定制阻抗谱研究，该电路包括导电机构中的晶粒和晶界的贡献。

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  • 来源
    《Optical and quantum electronics》 |2021年第10期|557.1-557.22|共22页
  • 作者

    A. Ashery; Mohamed M. M. Elnasharty; Mohamed Ali Salem; A. E. H. Gaballah;

  • 作者单位

    Solid State Electronics Laboratory Solid State Physics Department Physics Research Division National Research Centre 33 El-Bohouth St. Dokki Giza 12622 Egypt;

    Microwave Physics and Dielectrics Department Physics Division National Research Centre Dokki Giza 12622 Egypt;

    Solid State Electronics Laboratory Solid State Physics Department Physics Research Division National Research Centre 33 El-Bohouth St. Dokki Giza 12622 Egypt;

    Photometry and Radiometry Division National Institutes of Standards (NIS) Tersa St. Al-Haram Giza 1221 I.Egypt;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CuInGaSe_2; Alloy; LPE; Negative capacitance; Semiconductors; Electrical and dielectric;

    机译：Cuingase_2;合金;LPE;负电容;半导体;电气和电介质;

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