High-voltage active quenching and resetting circuit for SPADs in 0.35 μm CMOS for raising the photon detection probability

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High-voltage active quenching and resetting circuit for SPADs in 0.35 μm CMOS for raising the photon detection probability

机译：0.35μmCMOS中SPAD的高压有源淬灭和复位电路，可提高光子检测概率

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Alija Dervic$1Bernhard Steindl$1Michael Hofbauer$1Horst Zimmermann; $1Vienna University of Technology, Institute of Electrodynamics, Microwave and Circuit Engineering, Faculty of Electrical Engineering, Vienna, Austria; alija.dervic@tuwien.ac.at;;;; A fully integrated single-photon avalanche diode (SPAD) using a high-voltage quenching circuit fabricated in a 0.35-μm CMOS process is proposed. The quenching circuit features a quenching voltage of 9.9 V, which is three times the nominal supply voltage to increase the photon detection probability (PDP). To prove the quenching performance, the circuit has been integrated together with a large-area SPAD having an active diameter of 90 μm. Experimental verification shows a maximum PDP of 67.8% at 9.9 V excess bias at a wavelength of 642 nm. single-photon avalanche diode; active quenching; high-voltage quenching; photon detection probability; optoelectonic integrated circuits; photodetectors.

机译：Alija Dervic $ 1 Bernhard Steindl $ 1 Michael Hofbauer $ 1 Horst Zimmermann; 1美元维也纳工业大学，电气工程学院，电动力学，微波与电路工程研究所，奥地利维也纳； alija.dervic@tuwien.ac.at ;;;提出了一种完全集成的单光子雪崩二极管（SPAD），该器件使用以0.35-μmCMOS工艺制造的高压猝灭电路。灭弧电路具有9.9 V的灭弧电压，该电压是标称电源电压的三倍，以增加光子检测概率（PDP）。为了证明淬火性能，已将电路与有效直径为90μm的大面积SPAD集成在一起。实验验证显示，在642 V波长下，在9.9 V的过大偏压下，最大PDP为67.8％。单光子雪崩二极管；主动淬火高压淬火；光子检测概率；光电子集成电路；光电探测器。

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《Optical engineering》 |2019年第4期|040501.1-040501.4|共4页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
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1. High-voltage active quenching and resetting circuit for SPADs in 0.35 μm CMOS for raising the photon detection probability [J] . Optical engineering . 2019,第4期

机译：用于提高光子检测概率的0.35μmCMOS中的高压主动淬火和复位电路。用于提高光子检测概率
2. High Slew-Rate Quadruple-Voltage Mixed-Quenching Active-Resetting Circuit for SPADs in 0.35-μm CMOS for Increasing PDP [J] . Alija Dervić, Michael Hofbauer, Bernhard Goll, . 2021,第1期

机译：用于0.35微米CMOS中的高压率四重电压混合淬火有效复位电路，用于增加PDP
3. Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 mu m CMOS [J] . Hofbauer Michael, Steindl Bernhard, Zimmermann Horst Journal of Sensors . 2018,第Pta3期

机译：暗计数率的温度依赖性和在0.35μmCMOS中的集成有源淬火电路脉冲单光子雪崩二极管之后
4. Fully-integrated SPAD active quenching/resetting circuit in high-voltage 0.35-μ m CMOS for reaching PDP saturation at 650 nm [C] . Alija Dervić, Saman Kohneh Poushi, Horst Zimmermann International Symposium on Design and Diagnostics of Electronic Circuits and Systems . 2021

机译：高压0.35-μMCMOS的完全集成的SPAD主动淬火/复位电路，用于达到650nm的PDP饱和度
5. Physics of self-quenching and self-recovering Single Photon Avalanche Detectors (SPADs). [D] . You, Sifang. 2012

机译：自猝灭和自恢复单光子雪崩探测器（SPAD）的物理学。
6. Modeling and Analysis of Capacitive Relaxation Quenching in a Single Photon Avalanche Diode (SPAD) Applied to a CMOS Image Sensor [O] . Akito Inoue, Toru Okino, Shinzo Koyama, 2020

机译：应用于CMOS图像传感器的单光子雪崩二极管（SPAD）中的电容弛豫猝灭建模与分析
7. Compact CMOS active quenching/recharge circuit for SPAD arrays [O] . Ion Vornicu, Ricardo Carmona-Galán, Belén Pérez-Verdú, 2015

机译：用于Spad阵列的Compact CMOS主动淬火/充电电路

High-voltage active quenching and resetting circuit for SPADs in 0.35 μm CMOS for raising the photon detection probability

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