Enhanced luminescence property of InGaN/GaN nanorod array light emitting diode

著录项

• 来源
  《Optical engineering》 |2019年第4期|045102.1-045102.5|共5页
• 作者

  Bingshe Xu; Dan Han; Peizhi Liu; Qingming Liu; Aiqin Zhang; Shufang Ma; Lin Shang;

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• 作者单位

  Taiyuan University of Technology, Ministry of Education, Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan, China,Taiyuan University of Technology, Research Center of Advanced Materials Science and Technology, Taiyuan, China ,Shaanxi University of Science and Technology, Institute of Atomic and Molecular Science, Xi'an, China;

  Taiyuan University of Technology, MicroNano System Research Center, Key Lab of Advanced Transducers and Intelligent Control System of the Ministry of Education & College of Information Engineering, Jinzhong, China;

  Taiyuan University of Technology, Ministry of Education, Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan, China,Taiyuan University of Technology, Research Center of Advanced Materials Science and Technology, Taiyuan, China;

  Shaanxi University of Science and Technology, Institute of Atomic and Molecular Science, Xi'an, China;

  Taiyuan University of Technology, Ministry of Education, Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan, China,Taiyuan University of Technology, Research Center of Advanced Materials Science and Technology, Taiyuan, China;

  Shaanxi University of Science and Technology, Institute of Atomic and Molecular Science, Xi'an, China;

  Shaanxi University of Science and Technology, Institute of Atomic and Molecular Science, Xi'an, China;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
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