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Coherent thermal radiation effects on temperature-dependent emissivity of thin-film structures on optically thick substrates

机译:相干热辐射对光学厚度的基板上薄膜结构的温度依赖性发射率的影响

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摘要

Many studies on thermal processing of thin-film structures assume an incoherent thermal emission with an emissivity value that is constant or varies according to bulk properties. However, thermal radiation has a coherence length that varies with temperature. Thus, coherent thin-film interference affects the radiative properties of heterostructures when the wavelengths of radiation are of the same order of magnitude as the film thicknesses. For semiconducting and dielectric thin films on optically thick substrates, there are distinct trends in these microscale radiative effects. Numerical simulations of the temperature-dependent optical characteristics of multilayer thin-film structures were conducted to evaluate the thin-film interference effects. These results can be applied to thermal processes of thin-film structures where a spatial or temporal temperature distribution exists. An example of these effects is shown for radiative cooling of silicon-on-insulator wafers.
机译:薄膜结构热处理的许多研究都假设发射功率值恒定或随体积特性而变化的非相干热发射。但是,热辐射的相干长度随温度而变化。因此,当辐射的波长与膜厚度相同的数量级时,相干的薄膜干涉会影响异质结构的辐射特性。对于光学厚度的基板上的半导体和介电薄膜,这些微尺度辐射效应有明显的趋势。对多层薄膜结构的随温度变化的光学特性进行了数值模拟,以评估薄膜的干涉效应。这些结果可以应用于存在空间或时间温度分布的薄膜结构的热过程。展示了这些效应的一个示例,用于绝缘体上硅晶圆的辐射冷却。

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