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Optical amplification and its saturation in semiconductor quantum wells

机译：半导体量子阱中的光放大及其饱和度

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摘要

The spontaneous and stimulated emissions of strongly excited GaAs/(Ga,Al)As quantum wells are investigated in the one-dimensional optical amplifier geometry, using the variable-stripe-length method. The optical amplification and its saturation are studied by monitoring the spectra of spontaneous and amplified luminescence as a function of the position on the stripe. The deduced experimental spatial dependences of carrier and luminous densities are found to agree in a semiquantitative way with the numerical solutions of the amplifier equation, obtained by assuming steady state and thermal carrier distributions. Saturation of optical amplification is caused by two effects: (1) carrier depopulation through stimulated recombination of electron-hole pairs, and (2) loss of light caused by scattering at sample defects and by imperfect wave guiding.
机译：使用可变条带长度方法，在一维光学放大器几何结构中研究了强激发的GaAs /（Ga，Al）As量子阱的自发和受激发射。通过监测自发和放大发光的光谱作为条纹上位置的函数来研究光学放大及其饱和度。发现推导的实验载流子和发光密度的空间依赖性以半定量方式与通过假定稳态和热载流子分布而获得的放大器方程的数值解一致。光学放大作用的饱和是由两个作用引起的：（1）通过电子-空穴对的受激复合导致载流子减少，以及（2）样品缺陷处的散射和不完善的波导导致的光损失。

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