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Scanning spot metrology for testing of photolithographic masks

机译:扫描点计量以测试光刻掩模

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摘要

We investigated an optical method for characterizing submi-crometer structures of photolithographic masks, enabling fast and nondestructive testing over large areas. The scanning spot metrology provides accurate information about edge locations of opaque structures on chrome masks. Algorithms for the extraction of edge locations from the detector signal are discussed and applied to the characterization of a modulated grating mask. Local fabrication errors of the order of 10 to 50 nm can be detected.
机译:我们研究了表征光刻掩模亚微米级结构的光学方法,从而能够在大面积上进行快速且无损的测试。扫描点计量可提供有关铬掩模上不透明结构的边缘位置的准确信息。讨论了从探测器信号中提取边缘位置的算法,并将其应用于调制光栅掩模的表征。可以检测到大约10至50 nm的局部制造误差。

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