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首页> 外文期刊>Optical engineering >Electrodynamic properties of aqueous spray-deposited SnO_2:F films for infrared plasmonics
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Electrodynamic properties of aqueous spray-deposited SnO_2:F films for infrared plasmonics

机译：水喷雾沉积SnO_2：F薄膜对红外等离子体的电动力学性质

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摘要

Electrodynamic properties of fluorine-doped tin oxide films grown by aqueous-spray-based hetero-geneous reaction on heated hydrophilic substrates were investigated with emphasis on applications to infrared plasmonics. These properties were correlated with physical ones such as crystallinity, dopant and electron con-centrations, conductivity, and mobility. The degree of crystallinity for the nanocrystalline films increases with F concentration and growth temperature. The F concentration in the films is proportional to that in the starting solution. Electron concentration and Hall mobility rise more slowly with F concentration. At their highest, both F and electron concentrations are ～2% of the Sn concentration. In more lightly doped films, the electron concentration significantly exceeds the F concentration. The achieved resistivity of the doped films is lower than for undoped SnO_2 film by 20 to 750 times. The infrared complex permittivity spectrum shows a shift in plasma wavelength from 15 to 2 μm with more than two orders increase in F concentration.
机译：研究了在加热的亲水性基材上通过水基喷涂非均相反应生长的氟掺杂氧化锡薄膜的电动力学性质，重点是在红外等离激元上的应用。这些性质与物理性质如结晶度，掺杂剂和电子浓度，电导率和迁移率相关。纳米晶体膜的结晶度随F浓度和生长温度而增加。薄膜中的F浓度与起始溶液中的F成正比。电子浓度和霍尔迁移率随F浓度的升高更慢。 F和电子的最高浓度均为Sn浓度的〜2％。在轻度掺杂的薄膜中，电子浓度大大超过F浓度。掺杂薄膜的电阻率比未掺杂SnO_2薄膜低20到750倍。红外复介电常数谱显示等离子体波长从15μm移至2μm，F浓度增加了超过两个数量级。

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  • 来源
    《Optical engineering》 |2017年第3期|037109.1-037109.8|共8页
  • 作者

    Robert E. Peale; Evan Smith; Hussain Abouelkhair; Isaiah O. Oladeji; Shiva Vangala; Tim Cooper; Gordon Grzybowski; Farnood Khalilzadeh-Rezaie; Justin W. Cleary;

  • 作者单位

    University of Central Florida, Department of Physics, Orlando, Florida, United States,KBRwyle, Beavercreek, Ohio, United States;

    KBRwyle, Beavercreek, Ohio, United States,Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Ohio, United States;

    University of Central Florida, Department of Physics, Orlando, Florida, United States;

    Sisom Thin Films, LLC, Orlando, Florida, United States;

    Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Ohio, United States,Azimuth Corporation, Dayton, Ohio, United States;

    KBRwyle, Beavercreek, Ohio, United States,Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Ohio, United States;

    KBRwyle, Beavercreek, Ohio, United States,Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Ohio, United States;

    University of Central Florida, Department of Physics, Orlando, Florida, United States;

    Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Ohio, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    transparent oxides; optical materials; conductors; plasmonics; infrared;

    机译：透明氧化物;光学材料指挥;等离子体红外线;

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