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Fabrication of resonator-quantum well infrared photodetector focal plane array by inductively coupled plasma etching

机译：电感耦合等离子体刻蚀制备谐振腔量子阱红外光电探测器焦平面阵列

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Inductively coupled plasma (ICP) etching has distinct advantages over reactive ion etching in that the etching rates are considerably higher, the uniformity is much better, and the sidewalls of the etched material are highly anisotropic due to the higher plasma density and lower operating pressure. Therefore, ICP etching is a promising process for pattern transfer required during microelectronic and optoelectronic fabrication. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). To fabricate R-QWIP focal plane arrays (FPAs), two optimized ICP etching processes are developed. Using these etching techniques, we have fabricated R-QWIP FPAs of several different formats and pixel sizes with the required dimensions and completely removed the substrates of the FPAs. Their QE spectra were tested to be 30 to 40%. The operability and spectral non-uniformity of the FPA is ～99.5 and 3%, respectively.
机译：感应耦合等离子体（ICP）蚀刻比反应离子蚀刻具有明显的优势，因为较高的等离子体密度和较低的工作压力，蚀刻速率大大提高，均匀性好得多，并且被蚀刻材料的侧壁具有高度的各向异性。因此，ICP蚀刻是微电子和光电子制造过程中进行图案转移的有前途的工艺。共振器量子阱红外光电探测器（R-QWIP）是下一代QWIP探测器，它使用共振来提高量子效率（QE）。为了制造R-QWIP焦平面阵列（FPA），开发了两种优化的ICP蚀刻工艺。使用这些蚀刻技术，我们制造了具有所需尺寸的几种不同格式和像素大小的R-QWIP FPA，并完全去除了FPA的基板。他们的QE光谱经测试为30％至40％。 FPA的可操作性和光谱不均匀性分别为〜99.5和3％。

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