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High-temperature operation of interband cascade infrared photodetectors with cutoff wavelengths near 8 μm

机译：截止波长接近8μm的带间级联红外光电探测器的高温操作

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摘要

We present our recent studies on a set of three different type-II InAs/GaSb superlattice interband cascade infrared (IR) photodetectors. Electroluminescence and x-ray diffraction measurements suggest that all the grown structures had comparable material qualities. Two of these detectors were two- and three-stage structures with regular-illumination configurations and the other was a two-stage structure with a reverse-illumination configuration. The 100% cutoff wavelength for these detectors was 6.2 µm at 78 K, extending to 8 µm at 300 K. At T = 125 K and higher temperatures, we were able to observe the benefits of the three-stage detector over the two-stage device in terms of lower dark current and higher detectivity. We conjecture that the imperfections from the device growth and fabrication had a substantial effect on the low-temperature device performance and were responsible for the unexpected behavior at these temperatures. We also found that the zero-bias photoresponse increased with temperatures up to 200 K, which was indicative of efficient collection of photogenerated carriers at high temperatures. These detectors were able to operate at temperatures up to 340 K with a cutoff wavelength longer than 8 μm. This demonstrates the advantage of the interband cascade structures to achieve high-temperature operation for long-wave IR photodetectors.
机译：我们目前对一组三种不同的II型InAs / GaSb超晶格带间级联红外（IR）光电探测器进行研究。电致发光和X射线衍射测量表明，所有生长的结构具有可比的材料质量。这些检测器中的两个是具有常规照明配置的两级和三级结构，另一个是具有反向照明配置的两级结构。这些探测器的100％截止波长在78 K时为6.2 µm，在300 K时扩展为8 µm。在T = 125 K和更高的温度下，我们能够观察到三级探测器优于两级探测器的优势较低的暗电流和较高的检测能力。我们推测，器件生长和制造过程中的缺陷会对低温器件的性能产生重大影响，并导致这些温度下的意外行为。我们还发现零偏光响应随温度升高至200 K而增加，这表明在高温下有效收集了光生载流子。这些探测器能够在高达340 K的温度下工作，且截止波长大于8μm。这证明了带间级联结构对于长波红外光电探测器实现高温工作的优势。

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  • 来源
    《Optical engineering》 |2015年第6期|063103.1-063103.9|共9页
  • 作者

    Hossein Lotfi; Lin Lei; Lu Li; Rui Q. Yang; Joel C. Keay; Matthew B. Johnson; Yueming Qiu; Dmitri Lubyshev; Joel M. Fastenau; Amy W. K. Liu;

  • 作者单位

    University of Oklahoma, School of Electrical and Computer Engineering, Norman, Oklahoma 73019, United States;

    University of Oklahoma, School of Electrical and Computer Engineering, Norman, Oklahoma 73019, United States,University of Oklahoma, Homer L. Dodge Department of Physics and Astronomy, Norman, Oklahoma 73019, United States;

    University of Oklahoma, School of Electrical and Computer Engineering, Norman, Oklahoma 73019, United States;

    University of Oklahoma, School of Electrical and Computer Engineering, Norman, Oklahoma 73019, United States;

    University of Oklahoma, Homer L. Dodge Department of Physics and Astronomy, Norman, Oklahoma 73019, United States;

    University of Oklahoma, Homer L. Dodge Department of Physics and Astronomy, Norman, Oklahoma 73019, United States;

    IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015, United States;

    IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015, United States;

    IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015, United States;

    IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ⅲ-Ⅴ semiconductors; infrared detector; interband cascade; long-wave infrared; type-II superlattice;

    机译：Ⅲ-Ⅴ族半导体;红外探测器带间级联长波红外II型超晶格;

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