...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Optical engineering >Processing grating structures on surfaces of wide-bandgap semiconductors using femtosecond laser and phase mask
【24h】

Processing grating structures on surfaces of wide-bandgap semiconductors using femtosecond laser and phase mask

机译：使用飞秒激光和相位掩膜在宽带隙半导体表面处理光栅结构

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Fabrication of grating structures on surfaces of wide-bandgap semiconductors, namely silicon carbide (SiC) and gallium nitride (GaN), was achieved using a femtosecond laser and a phase mask. The phase mask was used to produce stable interference patterns from the focused femtosecond laser to form the grating structures on the bulk materials. The effects of the irradiation power and time on the Bragg grating morphology that was formed on the SiC surface were studied. By optimizing the fabrication parameters, we successfully produced grating structures with uniform periods of 1.07 μxx on SiC and GaN. The threshold powers necessary for grating structure formation on wide-bandgap semiconductors were investigated. It was found that the threshold powers for SiC and GaN were much smaller than those for silica glass. The reason for this difference is that the absorption of the incident laser light in SiC and GaN is a lower-order nonlinear absorption process compared to that in silica glass.
机译：使用飞秒激光和相位掩模在宽带隙半导体表面即碳化硅（SiC）和氮化镓（GaN）上制造光栅结构。相位掩模用于从聚焦的飞秒激光器产生稳定的干涉图样，以在块状材料上形成光栅结构。研究了照射功率和时间对在SiC表面形成的Bragg光栅形态的影响。通过优化制造参数，我们成功地在SiC和GaN上生产了周期为1.07μxx的光栅结构。研究了在宽带隙半导体上形成光栅结构所需的阈值功率。结果发现，SiC和GaN的阈值功率远小于石英玻璃的阈值功率。产生这种差异的原因是，与石英玻璃相比，SiC和GaN中入射激光的吸收是低阶非线性吸收过程。

著录项

  • 来源
    《Optical engineering》 |2015年第12期|273-273|共1页
  • 作者

    Bo Gao; Tao Chen; Wei Cui; Cunxia Li; Jinhai Si; Xun Hou;

  • 作者单位

    Xi'an Jiaotong University, School of Electronics & Information Engineering, Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, Xianning West Road, Xi'an 710049, China;

    Xi'an Jiaotong University, School of Electronics & Information Engineering, Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, Xianning West Road, Xi'an 710049, China;

    Xi'an Jiaotong University, School of Electronics & Information Engineering, Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, Xianning West Road, Xi'an 710049, China;

    Xi'an University of Technology, Department of Applied Physics, Yanxiang Road 58, Xi'an 710049, China;

    Xi'an Jiaotong University, School of Electronics & Information Engineering, Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, Xianning West Road, Xi'an 710049, China;

    Xi'an Jiaotong University, School of Electronics & Information Engineering, Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, Xianning West Road, Xi'an 710049, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    femtosecond laser; laser interaction with matter; semiconductor materials;

    机译：飞秒激光与物质的激光相互作用;半导体材料;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号