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Mid-wavelength infrared type-Ⅱ InAs/GaSb superlattice interband cascade photodetectors

机译：中波红外Ⅱ型InAs / GaSb超晶格带间级联光电探测器

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摘要

Recently, a new strategy to achieve high-operating temperature (HOT) infrared photodetectors to include cascade devices and alternate materials such as type-Ⅱ superlattices has been observed. Another method to reduce dark current is related to the limitation of the volume of detector material via a concept of a photon-trapping detector. The performance of an innovative HOT detector designing so-called interband (IB) cascade type-Ⅱ MWIR InAs/GaSb superlattice detectors is presented. Detailed analysis of the detector's performance (such as dark current, RA product, current responsivity, and response time) versus bias voltage and operating temperatures (220 to 400 K) is performed, pointing out the optimal working conditions. At the present stage of technology, the experimentally measured R_0A values of the IB cascade type-Ⅱ superlattice detectors at room temperature are higher than those predicted for HgCdTe photodiodes. It is shown that these HOT detectors have emerged as the competitors of HgCdTe photodetectors.
机译：近来，已经观察到一种新的策略来实现高工作温度（HOT）红外光电探测器，该探测器包括级联器件和替代材料，例如Ⅱ型超晶格。减少暗电流的另一种方法与通过光子俘获检测器的概念来限制检测器材料的体积有关。提出了一种创新的HOT探测器的性能，该探测器设计了所谓的带间（II）级联Ⅱ型MWIR InAs / GaSb超晶格探测器。对检测器的性能（例如暗电流，RA乘积，电流响应性和响应时间）与偏置电压和工作温度（220至400 K）进行了详细分析，指出了最佳工作条件。在目前的技术阶段，室温下IB级联Ⅱ型超晶格探测器的实验测得的R_0A值高于HgCdTe光电二极管的预测值。结果表明，这些HOT检测器已成为HgCdTe光电检测器的竞争对手。

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  • 来源
    《Optical engineering》 |2014年第4期|043107.1-043107.8|共8页
  • 作者

    Wioletta Pusz; Andrzej Kowalewski; Piotr Martyniuk; Waldemar Gawron; Elena Plis; Sanjay Krishna; Antoni Rogalski;

  • 作者单位

    Military University of Technology, Institute of Applied Physics, 2 Kaliskiego Street, 00-908 Warsaw, Poland;

    Military University of Technology, Institute of Applied Physics, 2 Kaliskiego Street, 00-908 Warsaw, Poland;

    Military University of Technology, Institute of Applied Physics, 2 Kaliskiego Street, 00-908 Warsaw, Poland;

    Military University of Technology, Institute of Applied Physics, 2 Kaliskiego Street, 00-908 Warsaw, Poland;

    University of New Mexico, Department of Electrical and Computer Engineering, Center for High Technology Materials, Albuquerque, New Mexico 87106;

    University of New Mexico, Department of Electrical and Computer Engineering, Center for High Technology Materials, Albuquerque, New Mexico 87106;

    Military University of Technology, Institute of Applied Physics, 2 Kaliskiego Street, 00-908 Warsaw, Poland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    high-operation temperature detectors; HgCdTe multiple photodetectors; type-Ⅱ InAs/GaSb superlattice photodetectors; interband cascade infrared detectors;

    机译：高操作温度探测器;HgCdTe多个光电探测器;Ⅱ型InAs / GaSb超晶格光电探测器;带间级联红外探测器;

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