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首页> 外文期刊>Optical engineering >Comparison of waveguide avalanche photodiodes with InP and InAIAs multiplication layer for 25 Gb/s operation
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Comparison of waveguide avalanche photodiodes with InP and InAIAs multiplication layer for 25 Gb/s operation

机译：具有25 Gb / s操作的InP和InAIAs倍增层的波导雪崩光电二极管的比较

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摘要

2.5 and 10 Gb/s InP/lnGaAs avalanche photodiodes (APDs) have been widely used in optical communication systems. However, the study on InP/lnGaAs APDs above 10 Gb/s is insufficient. Recently, highspeed and high-sensitivity APDs for 100 Gb/s or even 400 Gb/s optical communication systems have drawn a lot of attention. On basis of the physical model for frequency response of APD including the dead space effect, a waveguide separate absorption, grading, charge, and multiplication (WG-SAGCM) InP/lnGaAs APD has been designed for 25 Gb/s operation. Also, the frequency response of WG InAIAs/lnGaAs APD was also simulated, which is perfectly in accordance with the experimental data. The comparison between InP/lnGaAs APD and InAIAs/lnGaAs APD with the same thickness of multiplication layer shows that the speeds of carriers in the nonionization layers are also important for the gain-bandwidth characteristics of SAGCM WG-APD. The higher drift velocity of carriers returned from multiplication layer and the lower drift velocity of carriers injected into multiplication layer result in a higher gain-bandwidth product and a higher dc gain. This work is helpful for the design of high-speed APDS.
机译：2.5和10 Gb / s InP / InGaAs雪崩光电二极管（APD）已广泛用于光通信系统中。但是，对10 Gb / s以上的InP / InGaAs APD的研究是不够的。近来，用于100 Gb / s甚至400 Gb / s光通信系统的高速和高灵敏度APD引起了很多关注。根据APD频率响应的物理模型（包括死区效应），已针对25 Gb / s的工作速率设计了波导分离式吸收，渐变，电荷和倍增（WG-SAGCM）InP / InGaAs APD。此外，还模拟了WG InAIAs / InGaAs APD的频率响应，这与实验数据完全吻合。相同倍增层厚度的InP / InGaAs APD与InAIAs / InGaAs APD的比较表明，非电离层中载流子的速度对于SAGCM WG-APD的增益带宽特性也很重要。从乘法层返回的载波的较高漂移速度和注入乘法层的载波的较低漂移速度导致较高的增益带宽乘积和较高的dc增益。这项工作对高速APDS的设计很有帮助。

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