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Linear mode photon counting with the noiseless gain HgCdTe e-avalanche photodiode

机译:使用无噪声增益HgCdTe电子雪崩光电二极管进行线性模式光子计数

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A linear mode photon counting focal plane array using HgCdTe mid-wave infrared (MWIR) cutoff electron initiated avalanche photodiodes (e-APDs) has been designed, fabricated, and characterized. The broad spectral range (0.4 to 4.3 μm) is unique among photon counters, making this a "first of its kind" system spanning the visible to the MWIR. The low excess noise [F(M) ≈ 1] of the e-APDs allows for robust photon detection while operating at a stable linear avalanche gain in the range of 500-1000. The readout integrated circuit (ROIC) design included a very high gain-bandwidth product resistive transimpedance amplifier (3 × 10~(13) Ω-Hz) and a 4 ns output digital pulse width comparator. The ROIC had 16 high-bandwidth analogs and 16 low-voltage differential signaling digital outputs. The 2×8 array was integrated into an LN2 Dewar with a custom leadless chip carrier and daughter board design that preserved high-bandwidth analog and digital signal integrity. The 2×8 e-APD arrays were fabricated on 4.3 μm cutoff HgCdTe and operated at 84 K. The measured dark currents were approximately 1 pA at 13 V bias where the measured avalanche photodiode gain was 500. This translates to a predicted dark current induced dark count rate of less than 20 KHz. Single photon detection was achieved with a photon pulse signal-to-noise ratio of 13.7 above the amplifier noise floor. A photon detection efficiency of 50% was measured at a photon background limited false event rate of about 1 MHz. The measured jitter was in the range of 550-800 ps. The demonstrated minimum time between distinguishable events was less than 10 ns.
机译:设计,制作和表征了使用HgCdTe中波红外(MWIR)截止电子引发雪崩光电二极管(e-APDs)的线性模式光子计数焦平面阵列。宽光谱范围(0.4至4.3μm)在光子计数器之间是独一无二的,这使其成为涵盖MWIR可见光的“同类产品”中的第一个。 e-APD的低过剩噪声[F(M)≈1]允许在500-1000范围内的稳定线性雪崩增益下进行可靠的光子检测。读出集成电路(ROIC)设计包括一个非常高的增益带宽乘积电阻互阻放大器(3×10〜(13)Ω-Hz)和一个4 ns输出的数字脉冲宽度比较器。 ROIC具有16个高带宽模拟量和16个低压差分信号数字输出。 2×8阵列通过定制的无铅芯片载体和子板设计集成到LN2杜瓦瓶中,该设计保留了高带宽模拟和数字信号的完整性。 2×8 e-APD阵列在4.3μm截止HgCdTe上制造,并在84 K下运行。在13 V偏置下测得的暗电流约为1 pA,其中测得的雪崩光电二极管增益为500。这转化为预计的感应暗电流暗计数率小于20 KHz。单光子检测以高于放大器本底噪声的13.7的光子脉冲信噪比实现。在约1 MHz的光子背景限制虚假事件发生率下测得的光子检测效率为50%。测得的抖动在550-800 ps的范围内。所证明的可区分事件之间的最短时间小于10 ns。

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