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首页> 外文期刊>Optical Materials >Assessment of interfacial layer thickness of pulsed laser deposited plasmonic copper thin films via spectroscopic ellipsometer
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Assessment of interfacial layer thickness of pulsed laser deposited plasmonic copper thin films via spectroscopic ellipsometer

机译：椭圆偏振光谱仪评估脉冲激光沉积等离子体铜薄膜的界面层厚度

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摘要

The thickness of interfacial layer of semitransparent nanostructured plasmonic copper thin films fabricated on the glass substrate via pulsed laser deposition, as a function of deposition time, using spectroscopic ellipsometry is reported. The top oxide layer was identified as Cu2O having the thickness in the range of 2.47 nm-3.29 nm. The phase of interfacial layer is found to be changing from cupric oxide to cuprous oxide with the increase in deposition time and the thickness was found to increase from 0.25 to 0.61 nm for the deposition time of 6-10 min respectively. Longitudinal and transverse SPR modes were identified from SE measurements and were found to be in agreement with that of measured directly via UV-Visible spectrometer. The band gap energy of the top Cu2O layer was observed to be similar to 2.02 eV.
机译：报道了使用光谱椭圆偏振法通过脉冲激光沉积在玻璃基板上制备的半透明纳米结构等离子体铜薄膜的界面层厚度随沉积时间的变化。顶部氧化物层被鉴定为具有在2.47nm至3.29nm范围内的厚度的Cu 2O。随着沉积时间的增加，发现界面层的相从氧化铜变为氧化亚铜，并且对于6-10分钟的沉积时间，厚度分别从0.25增加到0.61nm。从SE测量中确定了纵向和横向SPR模式，发现与通过UV-可见光谱仪直接测量的模式一致。观察到顶部Cu 2 O层的带隙能量类似于2.02eV。

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