...
首页> 外文期刊>Optical Materials >Determination of the energy transfer section between CdS semiconductor quantum dots and Nd~(3+) ions
【24h】

Determination of the energy transfer section between CdS semiconductor quantum dots and Nd~(3+) ions

机译:CdS半导体量子点与Nd〜(3+)离子之间的能量转移截面的确定

获取原文
获取原文并翻译 | 示例
           

摘要

This paper proposes, for the first time, a quantitative description of the cross section of energy transfer between Nd3+ ions and quantum dots through rate equations model Nd3+ ions were embedded in a SNAB glass system with CdS quantum dots. This occurred because the Nd3+ ions absorbed photons emitted by CdS quantum dots with 457 nm excitation. Band overlap of the quantum dots luminescence band with the ion optical absorption bands caused photon absorption and produced valleys in the quantum dots luminescence spectrum. The energy transfer occurred via photon. The cross section of energy transfer was higher than that found in other semiconductor systems with rare earth.
机译:本文首次提出通过速率方程对Nd3 +离子嵌入Nd3 +离子与量子点之间的能量转移截面进行定量描述,该模型将Nd3 +离子嵌入具有CdS量子点的SNAB玻璃系统中。这是因为Nd3 +离子吸收了CdS量子点以457 nm激发发射的光子。量子点发光带与离子光学吸收带的能带重叠引起光子吸收并在量子点发光光谱中产生谷。能量转移是通过光子发生的。能量转移的截面要比其他含稀土的半导体系统的截面高。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号