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Comparison of the up-conversion photoluminescence for GAP, GAG and GAM phosphors

机译：GAP，GAG和GAM荧光粉的上转换光致发光比较

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摘要

GdAlO3:Er3+/Yb3+, Gd3Al3O12:Er3+/Yb3+ and Gd4Al2O9:Er3+/Yb3+ phosphors were prepared by co-precipitation. The effects for Gd2O3-Al2O3 composite oxides as the host materials with different crystal structures such as GdAlO3, Gd3Al3O12 and Gd4Al2O9 were investigated. It was found that the perovskite structured GdAlO3:Er3+/Yb3+ (GAP phosphor) could be obtained from the precursor when the calcination temperature was 1000 degrees C, while the garnet structured Gd3Al3O12:Er3+/Yb3+ (GAG phosphor) could be formed when the calcination temperature was 1300 degrees C, but the monoclinic-structured Gd4Al2O9:Er3+/Yb3+ (GAM phosphor) could be formed only when the calcination temperature was raised up to 1500 degrees C. The difference of the up-conversion photoluminescence (UCPL) spectra under 980 nm between the GAP, GAG and GAM phosphors was studied. The result showed that the UCPL intensity of the GAP phosphor was close to that of the GAM phosphor with much higher red-to-green intensity ratio than that of GAP phosphor. The UCPL intensity of GAG phosphor was the weakest among them. Finally, the factors which influenced on the UCPL of the GAP, GAG and GAM phosphors were discussed. (C) 2018 Elsevier B.V. All rights reserved.
机译：通过共沉淀制备GdAlO 3：Er 3+ / Yb 3+，Gd 3 Al 3 O 12：Er 3+ / Yb 3+和Gd 4 Al 2 O 9：Er3 + / Yb3 +磷光体。研究了以GdAlO3，Gd3Al3O12，Gd4Al2O9等晶体结构作为主体材料的Gd2O3-Al2O3复合氧化物的作用。发现当煅烧温度为1000℃时，钙钛矿结构的GdAlO3：Er3 + / Yb3 +（GAP荧光粉）可以从前体获得，而煅烧时可以形成石榴石结构的Gd3Al3O12：Er3 + / Yb3 +（GAG荧光粉）。温度为1300摄氏度，但只有在将煅烧温度提高到1500摄氏度时才能形成单斜晶结构的Gd4Al2O9：Er3 + / Yb3 +（GAM荧光粉）。980以下的上转换光致发光（UCPL）光谱差异研究了GAP，GAG和GAM荧光粉之间的纳米级。结果表明，GAP荧光粉的UCPL强度与GAM荧光粉的UCPL强度相近，红绿强度比远高于GAP荧光粉。 GAG荧光粉的UCPL强度最弱。最后，讨论了影响GAP，GAG和GAM荧光粉的UCPL的因素。 （C）2018 Elsevier B.V.保留所有权利。

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