Amorphous silicon nitride thin films implanted with cerium ions for cathodoluminescent light source

Akito Chiba; Shinnosuke Tanaka; Wataru Inami; Atsushi Sugita; Kazumasa Takada; Yoshimasa Kawata

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Amorphous silicon nitride thin films implanted with cerium ions for cathodoluminescent light source

机译：注入铈离子的非晶态氮化硅薄膜用于阴极发光光源

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摘要

Cerium ions were implanted into amorphous silicon nitride thin films, and the cathodoluminescence (CL) of the thin films was investigated. The Ce ions were distributed within a depth of around 20 nm from the surface of the amorphous silicon nitride, and they formed three kinds of cations in the thin films. By implanting the Ce ions, the CL of the films was distributed around a wavelength of 405 nm. The CL increase of more than 2.2 times compared to silicon nitride thin films was observed at 25-kV electron beam excitation. This increase was significantly enhanced by adopting a high-temperature annealing process after the cerium-ion implantation.

机译：将铈离子注入到非晶氮化硅薄膜中，并研究了薄膜的阴极发光（CL）。 Ce离子分布在距非晶氮化硅表面约20nm的深度内，并且它们在薄膜中形成了三种阳离子。通过注入Ce离子，膜的CL分布在405nm的波长附近。在25 kV电子束激发下，观察到的CL增长是氮化硅薄膜的2.2倍以上。通过在铈离子注入之后采用高温退火工艺，该增加显着增强。

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来源
《Optical Materials》 |2013年第11期|1887-1889|共3页
作者
Akito Chiba; Shinnosuke Tanaka; Wataru Inami; Atsushi Sugita; Kazumasa Takada; Yoshimasa Kawata;
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作者单位

Faculty of Engineering Shizuoka University 3-5-1 Johoku Naka-ku Hamamatsu Shizuoka 432-8561 Japan;

JST-CREST 3-5-1 Johoku Naka-ku Hamamatsu Shizuoka 432-8561 Japan Division of Global Research Leaders Shizuoka University 3-5-1 Johoku Naka-ku Hamamatsu Shizuoka 432-8561 Japan;

Faculty of Engineering Shizuoka University 3-5-1 Johoku Naka-ku Hamamatsu Shizuoka 432-8561 Japan JST-CREST 3-5-1 Johoku Naka-ku Hamamatsu Shizuoka 432-8561 Japan;

Graduate school of Engineering Gunma University 1-5-1 Tenjin-cho Kiryu Gunma 376-8515 Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Amorphous silicon nitride; Thin film; Cerium ion implantation; Cathodeluminescence; Point-like lightsource; e-Beam assisted near-field optical; microscope;

机译：非晶硅氮化物;薄膜;铈离子注入;阴极发光;点状光源;电子束辅助近场光学;显微镜;

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机译：基于氢化非晶氮化硅膜的直流和交流白光薄膜发光二极管的光电特性
2. Influences of low temperature silicon nitride films on the electrical performances of hydrogenated amorphous silicon thin film transistors [J] . Huang JJ, Liu CJ, Lin HC, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2008,第24期

机译：低温氮化硅膜对氢化非晶硅薄膜晶体管电性能的影响
3. The use of MACE technique on amorphous silicon-rich silicon nitride thin films for the formation of spherical silica nanoparticles [J] . Munoz-Rosas A. L., Rodriguez-Gomez A., Alonso-Huitron J. C., Journal of Materials Science . 2019,第23期

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4. Influence of Silicon Nitride and Amorphous Silicon on the Stability of Amorphous Silicon Thin-Film Transistors [C] . Chih-Yuan Hou, Shin-Hua Lin, Jun-Kai Chang, IDW '10;International display workshops . 2011

机译：氮化硅和非晶硅对非晶硅薄膜晶体管稳定性的影响
5. Characterization of amorphous silicon carbide and silicon carbonitride thin films synthesized by polymer-source chemical vapor deposition. Mechanical structural and metal-interface properties [D] . Awad, Yousef 2006

机译：通过聚合物源化学气相沉积合成的非晶碳化硅和碳氮化硅薄膜的表征。机械结构和金属界面性能
6. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices [O] . Ana Luz Muñoz-Rosas, Arturo Rodríguez-Gómez, Juan Carlos Alonso-Huitrón 2018

机译：嵌入氮化硅薄膜中的硅量子点与金纳米粒子在发光器件中的耦合增强了电致发光
7. Ultraviolet light induced annihilation of silicon dangling bonds in hydrogenated amorphous silicon nitride films [O] . W. L. Warren, C. H. Seager, J. Kanicki, 1995

机译：紫外线诱导亚硅悬空粘合氢化非晶氮化硅膜中的硅湮灭
8. Optically induced nitrogen dangling-bonds in amorphous hydrogenated silicon nitride thin films. [R] . W. L. Warren P. J. McWhorter J. Kanicki E. H. Poindexter 1991

机译：非晶氢化氮化硅薄膜中的光诱导氮悬挂键。

Amorphous silicon nitride thin films implanted with cerium ions for cathodoluminescent light source

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