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UV-VUV spectroscopy of rare earth doped persistent luminescence materials

机译：稀土掺杂持久发光材料的UV-VUV光谱

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摘要

The electronic and defect energy level structure of polycrystalline SrAl_2O_4:Eu~(2+),R~(3+) persistent luminescence materials were studied with thermoluminescence and UV-VUV synchrotron radiation emission and excitation spectroscopy. Theoretical calculations using the density functional theory (DFT) were carried out simultaneously with the experimental work. The experimental band gap energy (E_g) value of 6.6 eV agrees very well with the DFT value of 6.4 eV. The 4f~7 → 4f~65d~1 excitation bands of Eu~(2+) were found rather similar irrespective of the R~(3+) co-dopant. The trap level energy distribution depended strongly on the R~(3+) co-dopant except for the shallowest trap energy above the room temperature remaining the same, however. The different processes in the mechanism of persistent luminescence from SrAl_2O_4:Eu~(2+),R~(3+) was constructed and discussed.
机译：利用热致发光和紫外-紫外-紫外同步辐射辐射和激发光谱研究了多晶SrAl_2O_4：Eu〜（2 +），R〜（3+）持久发光材料的电子能级和缺陷能级结构。与实验工作同时进行了使用密度泛函理论（DFT）的理论计算。 6.6 eV的实验带隙能量（E_g）值与6.4 eV的DFT值非常吻合。 Eu〜（2+）的4f〜7→4f〜65d〜1激发带与R〜（3+）共掺杂无关。陷阱能级的能量分布主要取决于R〜（3+）共掺杂物，但室温以上的最浅陷阱能保持不变。构造并讨论了SrAl_2O_4：Eu〜（2 +），R〜（3+）持续发光机理的不同过程。

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