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Effect of electron beam writing parameters for ferroelectric domain structuring LiNbO_3:Nd~(3+)

机译：电子束写入参数对铁电畴结构LiNbO_3：Nd〜（3+）的影响

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摘要

We have successfully applied the versatile technique of direct electron beam writing to produce column shaped 180° micro-domains on a solid state laser crystal: Nd~(3+) doped LiNbO_3. The effect of the different parameters used during the electron lithography process has been analyzed on the morphology and on the optical properties of the inverted domains. Namely, we have studied the effect of the value of the accelerating voltage of the electrons and the effect of the electronic charge deposited onto the sample. By means of optical micrography and computer simulation we show that the accelerating voltage has a major effect on the diameter of inverted domains. On the other hand, the value of the electronic charge not only affects the domain size but it has also an additional and interesting effect on the optical spec-troscopy of Nd~(3+) ions. Using low temperature site selective optical spectroscopy we demonstrate the possibility of acting selectively on the crystal field of the optically active Nd~(3+) centers in LiNbO_3 by means of the different electronic doses used to reverse the polarization of the matrix. The work constitutes an approach towards the control of the properties of reversal ferroelectric domains structures prepared by direct electron beam lithography and towards understanding the role of optically active defects on the switching behaviour in ferroelectric crystals.
机译：我们已经成功地应用了直接电子束写入的多功能技术，以在固态激光晶体：Nd〜（3+）掺杂的LiNbO_3上产生圆柱状的180°微畴。已经分析了在电子光刻工艺中使用的不同参数的影响对倒置畴的形态和光学性质的影响。即，我们研究了电子的加速电压值的影响和沉积在样品上的电子电荷的影响。通过光学显微照片和计算机模拟，我们表明，加速电压对反向畴的直径有很大影响。另一方面，电荷的值不仅影响域的大小，而且对Nd〜（3+）离子的光谱学也产生了额外的有趣影响。使用低温现场选择性光谱法，我们证明了通过用于反转基质极化的不同电子剂量，选择性作用于LiNbO_3中旋光Nd〜（3+）中心的晶体场的可能性。这项工作构成了一种方法，用于控制通过直接电子束光刻制备的反向铁电畴结构的性能，以及了解光学活性缺陷对铁电晶体开关行为的作用。

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