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Structure and luminescence of nanocrystalline gallium nitride synthesized by a novel polymer pyrolysis route

机译:新型聚合物热解合成纳米晶氮化镓的结构与发光

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Thermal decomposition in a horizontal quartz tube reactor of a polymer [-(CH_6N_4O)_3Ga(NO_3)_3-] in a nitrogen atmosphere, yield directly nano-structured gallium nitride (GaN) powder. The polymer was obtained by the reaction between high purity gallium nitrate (Ga(NO_3)_3) dissolved in toluene and carbohydrazide as an azotic ligand. The powder synthesized by this method showed a yellow color and elemental analysis suggested that the color is due to some carbon and oxygen impurities in the as-synthesized powder. Electron microscopy showed that the as-synthesized powders consist of a mixture of various porous particles containing nanowires and nano-sized platelets. The size of the crystallites can be controlled by annealing processes under ammonia. Photoluminescence analysis at 10 K on as-synthesized powders showed a broad red luminescence around 668 nm under UV laser excitation (He-Cd laser, 325 nm). However after annealing process the red luminescence disappears and the typical band edge emission of GaN around 357 nm (3.47 eV) and the UV band were the dominant emissions in the PL spectra.
机译:聚合物[-(CH_6N_4O)_3Ga(NO_3)_3-]在卧式石英管反应器中在氮气氛中热分解,直接得到纳米结构的氮化镓(GaN)粉末。通过溶解在甲苯中的高纯度硝酸镓(Ga(NO_3)_3)与作为共沸配体的碳酰肼之间的反应获得聚合物。用这种方法合成的粉末呈黄色,元素分析表明该颜色是由于合成粉末中的一些碳和氧杂质造成的。电子显微镜显示,合成后的粉末由各种包含纳米线和纳米级血小板的多孔颗粒的混合物组成。微晶的尺寸可以通过在氨下的退火工艺来控制。合成后的粉末在10 K下的光致发光分析显示,在UV激光激发(He-Cd激光,325 nm)下,约668 nm处有宽泛的红色发光。然而,在退火过程之后,红色发光消失,并且在357 nm(3.47 eV)附近的GaN典型能带边缘发射和UV谱带是PL光谱中的主要发射。

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