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Studies on vacuum evaporated PbS_(1-x)Se_x thin films

机译：真空蒸发PbS_（1-x）Se_x薄膜的研究

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The narrow gap Ⅳ-Ⅵ semiconductors have been the subject of extensive research owing to their technological importance. The fabrication of devices with alloys of these compounds with detecting and lasing capabilities has been an important recent technological development. The high quality polycrystalline thin films of PbS_(1-x)Se_x with variable composition (O≤x≤1) have been deposited onto ultra dean glass substrates by vacuum evaporation technique. As-deposited films were annealed in vacuum at 350 K. Structural, electrical and optical properties of PbS_(1-x)Se_x thin films have been examined. The X-ray diffraction patterns were used to determine the sample quality, crystal structure and lattice parameter of the films. The de conductivity and activation energy of the films were measured in the temperature range 300-380 K. The absorption coefficient and band gap of the films were determined by absorbance measurements in wavelength range 2500-5000 nm using FTIR spectrophotometer.
机译：窄间隙Ⅳ-Ⅵ半导体由于其技术重要性而成为广泛研究的对象。用具有检测和激光发射能力的这些化合物的合金制造器件是近来重要的技术发展。通过真空蒸发技术将具有可变组成（O≤x≤1）的PbS_（1-x）Se_x高质量多晶薄膜沉积到超纯玻璃基板上。将沉积的薄膜在350 K的真空下退火。已检查了PbS_（1-x）Se_x薄膜的结构，电学和光学性质。 X射线衍射图用来确定样品的质量，薄膜的晶体结构和晶格参数。在300-380 K的温度范围内测量薄膜的电导率和活化能。使用FTIR分光光度计通过在2500-5000 nm波长范围内的吸光度测量来确定薄膜的吸收系数和带隙。

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