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Preparation and characteristics of vanadium oxide thin films by controlling the sputtering voltage

机译：通过控制溅射电压制备氧化钒薄膜及其特性

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摘要

Influence of sputtering voltage on the deposition process and characteristics of vanadium oxide thin films prepared by reactive DC magnetron sputtering is investigated. The target surface cleaning is controlled by adjusting the sputtering voltage. During the sputtering process, the sputtering voltage increases faster with larger O_2 gas flow rate. The sputtering voltage is easy to be stable with larger sputtering voltage. The measured sputtering voltage is correlated to the ion induced secondary electron emission (ISEE) coefficient of the target material. The ISEE coefficient of the oxidized vanadium target surface is lower than the ISEE coefficient of the vanadium metal. The semiconductor to metal (S-M) phase transition temperature decreases with the sputtering voltage, leading to the lower the corresponding temperature of the maximum temperature coefficient of resistance (TCR). By this way, O/V ratio, R, and TCR of VOx films can be controlled by adjusting the sputtering voltage.
机译：研究了溅射电压对反应性直流磁控溅射制备钒氧化物薄膜的沉积过程和性能的影响。通过调节溅射电压来控制目标表面清洁。在溅射过程中，随着O_2气体流量的增加，溅射电压会更快地增加。较大的溅射电压容易使溅射电压稳定。测得的溅射电压与目标材料的离子感应二次电子发射（ISEE）系数相关。氧化的钒靶表面的ISEE系数低于钒金属的ISEE系数。半导体到金属（S-M）的相变温度随溅射电压而降低，从而导致相应的最高电阻温度系数（TCR）的温度降低。这样，可以通过调节溅射电压来控制VOx膜的O / V比，R和TCR。

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