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首页> 外文期刊>Optical Materials >Time-resolved photoluminescence from Si-in-SiN_x/Si-in-SiC quantum well-dot structures
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Time-resolved photoluminescence from Si-in-SiN_x/Si-in-SiC quantum well-dot structures

机译：Si-in-SiN_x / Si-in-SiC量子阱结构的时间分辨光致发光

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摘要

Si-in-SiN_x/Si-in-SiC quantum well-dot structures, with Si quantum dots slightly larger than 1.0 nm embedded in both amorphous SiN_x and SiC sublayers, were grown at nearly room temperature by using PECVD. Time-resolved photoluminescence for three samples in a period of 100/30 nm, 60/10 nm and 20/ 10 nm, respectively, has been measured at emission lengths ranging from 430 nm to 490 nm, and fitted with a stretched-exponential function. Typical decay time was at the order of one nanosecond, which could be attributed to the core-state emission. The matrix materials forming the well provide a non-uniform potential background which induces a modulation to the carrier diffusion process, thus resulting in an emission-wavelength dependent decay time. When confinement effect from the well comes into play as in the sample of smaller well width, the decay time can be below 1.0 ns and indifferent to the varied emission wavelength, and the carrier diffusion is dominated by hopping. These quantum well-dot systems of strong and fast decaying light emission in blue-violet colors might find potential utilization in GHz optical connection and other photoelectronic devices.
机译：通过使用PECVD，在几乎室温下生长了Si-in-SiN_x / Si-in-SiC量子阱点结构，在非晶SiN_x和SiC子层中均嵌入了略大于1.0 nm的Si量子点。已经测量了三个样品在100/30 nm，60/10 nm和20/10 10 nm期间的时间分辨光致发光，其发射长度为430 nm至490 nm，并具有拉伸指数函数。典型的衰减时间约为一纳秒，这可能归因于核心态发射。形成阱的基质材料提供了不均匀的电势本底，从而导致对载流子扩散过程的调制，从而导致了与发射波长有关的衰减时间。当像在较小的阱宽度的样品中那样从阱中发挥约束作用时，衰减时间可以低于1.0 ns，并且对变化的发射波长无关，并且载流子扩散以跳跃为主导。这些蓝紫色强烈且快速衰减的光发射的量子点系统可能会在GHz光学连接和其他光电设备中得到潜在利用。

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  • 来源
    《Optical Materials》 |2013年第12期|2414-2417|共4页
  • 作者

    Rao Huang; Yun Du; Ailing Ji; Zexian Cao;

  • 作者单位

    Institute of Physics Chinese Academy of Sciences Beijing 100190 China Department of Physics Xiamen University Xiamen 361005 China;

    Institute of Physics Chinese Academy of Sciences Beijing 100190 China Hangzhou Dianzi University Hangzhou 310018 China;

    Institute of Physics Chinese Academy of Sciences Beijing 100190 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Time-resolved photoluminescence; Si-in-SiN_x/Si-in-SiC; Si quantum dots; PECVD;

    机译：时间分辨光致发光;Si-in-SiN_x / Si-in-SiC;硅量子点;化学气相沉积;

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