...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Optical Materials >Near infrared photonic devices based on Er-doped GaN and InGaN
【24h】

Near infrared photonic devices based on Er-doped GaN and InGaN

机译：基于掺Er的GaN和InGaN的近红外光子器件

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Er-doped Ill-nitride semiconductors have emerged as very attractive materials to achieve photonic devices with multiple functionalities for photonic integrated circuits (PICs). Optical sources and amplifiers based on these materials, particularly GaN and InGaN alloys, can operate at 1.54 urn and are expected to be temperature insensitive and have high signal gain with low noise. There is also the potential for these devices to be electrically pumped and to be integrated onto PICs, which is not possible with either Er-doped silica glasses or narrow bandgap semiconductors like InGaAsP. Here we present results on near infrared emitters and optical amplifiers based on Er-doped GaN/InGaN epilayers grown on different substrates by metal organic chemical vapor deposition (MOCVD). In particular, we report on chip-size current injected emitters and amplifiers fabricated by heterogeneously integrating Er-doped GaN/InGaN epilayers with UV nitride light-emitting diodes. The feasibility of developing electrically pumped optical amplifiers for PIC integration will also be discussed.
机译：掺的III族氮化物半导体已经成为非常有吸引力的材料，以实现具有用于光子集成电路（PIC）的多种功能的光子器件。基于这些材料的光源和放大器，特别是GaN和InGaN合金，可以在1.54 um下工作，并且预计它们对温度不敏感，并具有高信号增益和低噪声。这些器件也有可能被电泵浦并集成到PIC上，而掺Er石英玻璃或窄带隙半导体（如InGaAsP）则无法实现。在这里，我们介绍了基于通过金属有机化学气相沉积（MOCVD）在不同衬底上生长的掺Er GaN / InGaN外延层的近红外发射器和光放大器的结果。特别是，我们报告了通过将掺Er的GaN / InGaN外延层与UV氮化物发光二极管异质集成而制造的芯片尺寸的电流注入发射器和放大器。也将讨论开发用于PIC集成的电泵浦光放大器的可行性。

著录项

  • 来源
    《Optical Materials》 |2011年第7期|p.1066-1070|共5页
  • 作者

    R. Dahal; J.Y. Lin; H.X. Jiang; J.M. Zavada;

  • 作者单位

    Department of Electrical and Computer Engineering Texas Tech University Lubbock TX 79409 United States;

    Department of Electrical and Computer Engineering North Carolina State University Raleigh NC 27695-7911 United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    er; gan; ingan; pl; ple; ir emitter;

    机译：是;甘氮化镓;pl;ple;红外发射器;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号