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Vapor growth of CdSe:Cr and CdS:Cr single crystals for mid-infrared lasers

机译：CdSe：Cr和CdS：Cr单晶在中红外激光中的气相生长

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摘要

Single crystals of CdSe:Cr and CdS:Cr with the doping level up to 10 cm were grown by a vapor phase contact-free technique. An efficient room-temperature pulsed and continuous wave (CW) lasing with the CdSe:Cr crystal was achieved. First a pulsed lasing with the CdS:Cr crystal was also demonstrated. The slope efficiency on the absorbed energy was as high as 46.5% for Cr~(2+):CdSe and 39% for Cr~(2+):CdS lasers. Using an intra-cavity prism, the Cr~(2+):CdSe laser wavelength was continuously tuned from 2.26 to 3.61 μm while the Cr~(2+):CdS laser from 2.2 to 3.3 μm. For the laser wavelength, the crystal passive loss coefficient was estimated to be smaller than 0.045 cm~(-1) for CdSe:Cr crystals and 0.039 cm~(-1) for CdS:Cr crystals. For the Cr~(2+):CdSe laser, the CW output power up to 1.07 W was achieved.
机译：通过气相无接触技术生长了掺杂水平高达10 cm的CdSe：Cr和CdS：Cr单晶。利用CdSe：Cr晶体实现了高效的室温脉冲和连续波（CW）激光发射。首先，还演示了CdS：Cr晶体的脉冲激光发射。 Cr〜（2 +）：CdSe激光器的吸收能量斜率效率高达46.5％，而Cr〜（2 +）：CdS激光器的吸收效率斜率效率高达39％。使用腔内棱镜，将Cr〜（2 +）：CdSe激光波长从2.26连续调谐到3.61μm，而将Cr〜（2 +）：CdS激光从2.2至3.3μm连续调谐。对于激光波长，CdSe：Cr晶体的晶体无源损耗系数估计小于0.045 cm〜（-1），CdS：Cr晶体的晶体无源损耗系数估计小于0.039 cm〜（-1）。对于Cr〜（2 +）：CdSe激光器，其CW输出功率高达1.07W。

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