Carrier dynamics and intervalley scattering in InN

D.-J. Jang; G.-T. Lin; M.-E. Lee; C.-L. Wu; C.-L.Hsiao; L.-W. Tu

首页> 外文期刊>Optical Materials >Carrier dynamics and intervalley scattering in InN

【24h】

Carrier dynamics and intervalley scattering in InN

机译：InN中的载流子动力学和intervalley散射

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The carrier cooling and the carrier relaxation of an InN thin film illuminated with two excitation energies of 1.53 and 3.06 eV were studied by an ultrafast time-resolved photoluminescence upconversion apparatus. The hot phonon effect could be accounted for longer effective phonon emission times as compared to the theoretical prediction. The rise time and the LO phonon emission time for 3.06 eV excitation were much smaller than those for 1.53 eV excitation. These differences were attributed to the intervalley scattering between the Γ_1 and Γ_3 valleys in InN when carriers were excited with the energy of 3.06 eV. The intervalley scattering times of 250 fs and 2 ps were estimated for the intervalley scattering from the Γ_1 to Γ_3 valley and the reversed scattering process, respectively.

机译：用超快时间分辨光致发光上转换装置研究了用1.53和3.06 eV的两种激发能照射的InN薄膜的载流子冷却和载流子弛豫。与理论预测相比，热声子效应可以解释为更长的有效声子发射时间。 3.06 eV激发的上升时间和LO声子发射时间比1.53 eV激发的上升时间和LO声子发射时间小得多。这些差异归因于当载流子被3.06 eV能量激发时InN的Γ_1和Γ_3谷之间的区间分布。对于从Γ_1到Γ_3谷的区间散射和逆向散射过程，分别估计了250 fs和2 ps的区间散射时间。

著录项

来源
《Optical Materials》 |2009年第12期|1857-1859|共3页
作者
D.-J. Jang; G.-T. Lin; M.-E. Lee; C.-L. Wu; C.-L.Hsiao; L.-W. Tu;
展开▼
作者单位

Department of Physics and Center for Nanoscience and Nanotechnology National Sun Vat-sen University Kaohsiung 80424 Taiwan ROC;

Department of Physics National Kaoshiung Normal University Kaohsiung 80264 Taiwan ROC;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
intervalley scattering; InN; time-resolved photoluminescence; carrier relaxation; hot carrier; electron-phonon interaction;

机译：区间散射旅店;时间分辨光致发光载流子松弛热载体电子-声子相互作用;

相似文献

外文文献
中文文献
专利

1. Effects of Carrier Confinement and Intervalley Scattering on Photoexcited Electron Plasma in Silicon [J] . A. Sieradzki, Z. T. Kuznicki Plasmonics . 2013,第4期

机译：载流子限制和区间散射对硅中光激发电子等离子体的影响
2. Interplay between the hot phonon effect and intervalley scattering on the cooling rate of hot carriers in GaAs and InP [J] . Raphael Clady, Murad J. Y. Tayebjee, Pasquale Aliberti Progress in photovoltaics . 2012,第1期

机译：GaAs和InP中热声子效应与区间扩散对热载流子的冷却速率的相互作用
3. Specific features of intervalley scattering of charge carriers in n-Si at high temperatures [J] . Fedosov A.V., Luniov S.V., Fedosov S.A. Semiconductors . 2010,第10期

机译：高温下n-Si中电荷载流子的间隔分布特征
4. Explore the Intervalley Scattering on Phonon Bottleneck Effect and Its Application on Hot Carrier Solar Cells [C] . Yi Zhang, Jing Huang, Liangliang Tang, IEEE PES Asia-Pacific Power and Energy Engineering Conference . 2020

机译：探索声子瓶颈效应的间隔散射及其在热载流子太阳能电池中的应用
5. Strain Engineering of the Band Structure and Picosecond Carrier Dynamics of Single Semiconductor Nanowires Probed by Modulated Rayleigh Scattering Microscopy. [D] . Montazeri, Mohammad. 2013

机译：调制瑞利散射显微镜探测单半导体纳米线的能带结构和皮秒载流子动力学的应变工程。
6. Effects of Carrier Confinement and Intervalley Scattering on Photoexcited Electron Plasma in Silicon [O] . A. Sieradzki, Z. T. Kuznicki -1

机译：载流子限制和区间散射对硅中光激发电子等离子体的影响
7. Publisher Correction: Exploiting intervalley scattering to harness hot carriers in III–V solar cells [O] . Hamidreza Esmaielpour, Kyle R. Dorman, David K. Ferry, 2020

机译：出版商校正：利用Internalley散射到III-V太阳能电池中的利用热载体
8. Effect of Electron-Electron Scattering on Intervalley Transition Rates ofPhotoexcited Carriers in GaAs [R] . Kann, M. J., Kriman, A. M., Ferry, D. K. 1990

机译：电子 - 电子散射对Gaas中激发载流子间隙跃迁速率的影响

Carrier dynamics and intervalley scattering in InN

摘要

著录项

相似文献

相关主题

期刊订阅