Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual

Y. Chriqui; G. Saint-Girons; G. Isella; H. von Kaenel; S. Bouchoule; I. Sagnes

首页> 外文期刊>Optical Materials >Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual

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Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual

机译：通过在低能量等离子体增强的化学气相沉积上梯度取向的Ge / Si虚构的金属有机化学气相沉积单片生长的应变InGaAs / GaAs量子阱结构的长波长室温激光操作

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We report on the first room temperature (RT) laser operation at 1.04μm from strained InGaAs/GaAs quantum well structures grown by metalorganic chemical vapour deposition and monolithically integrated on Si using a 6° offcut Ge/GeSi/Si virtual substrate (VS) realised by low energy-plasma enhanced chemical vapour deposition. Similar threshold current density from identical control laser diodes grown on bulk germanium substrates demonstrates the potential of Ge/GeSi/Si-VS for the monolithic integration of long wavelength GaAs-based lasers on Si. A way to reduce the crack density is also proposed to improve the laser characteristics,

机译：我们报告了第一次应变的InGaAs / GaAs量子阱结构在1.04μm处的室温（RT）激光操作，该结构由金属有机化学气相沉积生长，并使用实现的6°切入Ge / GeSi / Si虚拟衬底（VS）单片集成在Si上通过低能等离子体增强化学气相沉积。来自生长在块状锗衬底上的相同控制激光二极管的相似阈值电流密度表明，Ge / GeSi / Si-VS具有潜力，可以将长波长基于GaAs的激光器单片集成到Si上。还提出了一种降低裂纹密度的方法来改善激光特性，

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来源
《Optical Materials》 |2005年第5期|p.846-850|共5页
作者
Y. Chriqui; G. Saint-Girons; G. Isella; H. von Kaenel; S. Bouchoule; I. Sagnes;
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作者单位

Laboratoire de Photonique et de Nanostructures (L.P.N.) CNRS UPR20 Route de Nozay F-91460 Marcoussis France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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专利

1. Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition [J] . Sato S., Satoh S. Electronics Letters . 1998,第15期

机译：通过金属有机化学气相沉积法生长的应变GaInNAs / GaAs双量子阱激光二极管的室温脉冲操作
2. AlInGaAs/AlGaAs strained quantum-well ridge waveguide lasers grown by metalorganic chemical vapor deposition [J] . Hughes N.A., Connolly J.C. IEEE Photonics Technology Letters . 1992,第2期

机译：通过金属有机化学气相沉积法生长的AlInGaAs / AlGaAs应变量子阱脊形波导激光器
3. Low-Threshold-Current-Density, Long-Wavelength, Highly Strained InGaAs Laser Grown by Metalorganic Chemical Vapor Deposition [J] . I-Liang CHEN, Wei-Chou HSU, Hao-Chung KUO, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第10期

机译：金属有机化学气相沉积生长的低阈值电流密度，长波长，高应变InGaAs激光器
4. CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition [C] . Tatebayashi, J., Kakuma, . 2003

机译：自组装InAs量子点激光器在金属有机化学气相沉积生长的GaAs衬底上的连续激光激射
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Characterization of nitrogen doped grapheme bilayers synthesized by fast low temperature microwave plasma-enhanced chemical vapour deposition [O] . C. R. S. V. Boas, B. Focassio, E. Marinho Jr., -1

机译：通过快速低温微波等离子体增强化学气相沉积合成的氮掺杂石墨烯双层的表征
7. Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates [O] . Bhattacharya, Arnab, Mawst, Luke J., Nayak, Sabyasachi, 1996

机译：在Gaas衬底上通过金属有机化学气相沉积生长的InGaas / InGaasp / InGap量子阱激光二极管的界面结构
8. Strained-Layer InGaAs(P)/InP Quantum Well Semiconductor Lasers Grown by Organometallic Vapour Phase Epitaxy [R] . Thijs, P. J. A. 1994

机译：有机金属气相外延生长的应变层InGaas（p）/ Inp量子阱半导体激光器

Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual

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