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Study of third order nonlinearity of chalcogenide thin films using third harmonic generation measurements

机译：利用三次谐波测量研究硫族化物薄膜的三阶非线性

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摘要

Third order nonlinear susceptibility of (GeSe3.5)(100.x)Bi-x (x = 0, 10, 14) and ZnxSySe100-x-y), (x = 2, y = 28; x = 4, y = 20; x = 6, y = 12; x = 8, y = 4) amorphous chalcogenide thin films prepared using thermal evaporation technique is estimated. The dielectric constant at incident and third harmonic wavelength is calculated using "PARAV" computer program. 1064 nm wavelength of Nd: YAG laser is incident on thin film and third harmonic signal at 355 nm wavelength alongwith fundamental light is obtained in reflection that is separated from 1064 nm using suitable optical filter. Reflected third harmonic signal is measured to trace the influence of Bi and Zn on third order nonlinear susceptibility and is found to increase with increase in Bi and Zn content in (GeSe3.5)(100-x)Bi-x, and ZnxSySe100-x-y chalcogenide thin films respectively. The excellent optical nonlinear property shows the use of chalcogenide thin films in photonics for wavelength conversion and optical data processing.
机译：（GeSe3.5）（100.x）Bi-x（x = 0，10，14）和ZnxSySe100-xy）的三阶非线性磁化率，（x = 2，y = 28; x = 4，y = 20; x ＝ 6，y ＝ 12； x ＝ 8，y ＝ 4）估计使用热蒸发技术制备的非晶硫属化物薄膜。使用“ PARAV”计算机程序计算入射和三次谐波波长下的介电常数。 Nd的1064 nm波长：YAG激光入射到薄膜上，并且使用合适的滤光片在反射中获得了355 nm波长的三次谐波信号以及基波光，该反射光与1064 nm分离。测量反射的三次谐波信号以追踪Bi和Zn对三阶非线性磁化率的影响，发现其随（GeSe3.5）（100-x）Bi-x和ZnxSySe100-xy中Bi和Zn含量的增加而增加硫属化物薄膜。优异的光学非线性特性表明，在光子学中使用硫族化物薄膜进行波长转换和光学数据处理。

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