...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Optical Materials >Controlling optical polarization of {11-22} semipolar multiple quantum wells using relaxed underlying InGaN buffer layers
【24h】

Controlling optical polarization of {11-22} semipolar multiple quantum wells using relaxed underlying InGaN buffer layers

机译：使用松弛的底层InGaN缓冲层控制{11-22}半极性多量子阱的光偏振

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We successfully fabricated {11-22} multiple quantum wells (MQWs) having different emission peak wavelengths on partially or completely relaxed thick InGaN buffer layers with different In contents formed on a semipolar {11-22} GaN layer, which was grown on a patterned r-plane sapphire substrate. The polarization properties changed significantly with changing in In content and thickness for InGaN buffer layer. For the same In content of the InGaN buffer layer, the optical polarization changed with an increase in the thickness of the underlying InGaN buffer layer, indicating a change in the relaxation ratio of the InGaN buffer layer. Similarly, for the same thickness of the InGaN buffer layer, the optical polarization changed by changing In content of the InGaN buffer layer. Thus, the degree of optical polarization could be controlled by varying the In content of the underlying InGaN buffer layer. (C) 2016 Elsevier B.V. All rights reserved.
机译：我们成功地在半极性{11-22} GaN层上形成了部分或完全弛豫的厚InGaN缓冲层上制造了具有不同发射峰值波长的{11-22}多量子阱（MQW），该InGaN缓冲层形成在图案化的半极性{11-22} GaN层上r面蓝宝石衬底。随着InGaN缓冲层的In含量和厚度的变化，极化特性显着变化。对于相同的InGaN缓冲层的In含量，光偏振随着下面的InGaN缓冲层的厚度的增加而改变，这表明InGaN缓冲层的弛豫率改变。类似地，对于相同厚度的InGaN缓冲层，通过改变InGaN缓冲层的In含量来改变光偏振。因此，可以通过改变下面的InGaN缓冲层的In含量来控制光偏振度。 （C）2016 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号