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首页> 外文期刊>Optical Materials >Investigation of Tin(II)2,3-naphtalocyanine molecule used as near infrared sensitive layer in organic up-conversion devices
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Investigation of Tin(II)2,3-naphtalocyanine molecule used as near infrared sensitive layer in organic up-conversion devices

机译：有机上转换装置中用作近红外敏感层的锡（II）2,3-萘酞菁分子的研究

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In this work, a near infrared (NIR) sensitive molecule, Tin(II)2,3-naphthalocyanine (SnNc) was characterized by different techniques. UV-Vis spectroscopy and cyclic voltammetry were performed in order to determine the absorption spectrum, the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) energies of this molecule deposited in form of thin films. We found energies of 5.0 +/- 0.1 eV and 3.7 +/- 0.1 eV for HOMO and LUMO, respectively. The charge carrier mobility was also investigated by space charge limit current technique showing values of NI (8.8 +/- 0.1) x 10(-5) cm(2)V(-1)s(-1). SnNc alone or blended with fullerene was used as efficient NIR sensitive layer due to its absorption around 875 nm. The crystalline structure of SnNc was studied by X-ray powder diffraction, showing a monoclinic system and P2(1/c) space group, with cell parameters a = (15.948 +/- 6) angstrom, b = (15.818 +/- 2) angstrom, c = (14.649 +/- 1) angstrom and [beta = (67.096 +/- 6) angstrom. Desorption/Ionization-Time of Flight Mass Spectrometry (LDI-TOFMS) technique was employed to obtain information of molecular structure of the SnNc in thin film, showing that the thin film of the SnNc has no dimer formation. Due to its absorption around 875 nm, SnNc blended with fullerene was used as efficient NIR sensitive layer in the fabrication of an organic up-conversion device. When the device is submitted to IR radiation, a gain of about 133% was observed in the luminous efficiency when compared to values without IR irradiation. (C) 2017 Elsevier B.V. All rights reserved.
机译：在这项工作中，近红外（NIR）敏感分子锡（II）2,3-萘酞菁（SnNc）用不同的技术表征。为了确定吸收光谱，以薄膜形式沉积的该分子的吸收光谱，最高占据分子轨道（HOMO）和最低未占据分子轨道（LUMO）能量，进行了紫外-可见光谱和循环伏安法。我们发现HOMO和LUMO的能量分别为5.0 +/- 0.1 eV和3.7 +/- 0.1 eV。还通过空间电荷极限电流技术研究了载流子迁移率，显示了NI（8.8 +/- 0.1）x 10（-5）cm（2）V（-1）s（-1）的值。单独的SnNc或与富勒烯混合的SnNc由于在875 nm左右的吸收而被用作有效的NIR敏感层。通过X射线粉末衍射研究了SnNc的晶体结构，显示了单斜晶系和P2（1 / c）空间群，单元参数a =（15.948 +/- 6）埃，b =（15.818 +/- 2） ），c =（14.649 +/- 1）埃和[beta =（67.096 +/- 6）埃。利用解吸/电离飞行时间质谱（LDI-TOFMS）技术获得薄膜中SnNc的分子结构信息，表明SnNc薄膜没有二聚体形成。由于其在875 nm附近的吸收，掺有富勒烯的SnNc被用作有机上转换器件制造中的有效NIR敏感层。当该设备经受红外辐射时，与没有红外辐射的值相比，发光效率提高了约133％。 （C）2017 Elsevier B.V.保留所有权利。

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