...
首页> 外文期刊>Optical Materials >Optical properties of high photoluminescence silicon nanocrystals embedded in SiO_2 matrices obtained by annealing hydrogen silsesquioxane
【24h】

Optical properties of high photoluminescence silicon nanocrystals embedded in SiO_2 matrices obtained by annealing hydrogen silsesquioxane

机译:硅倍半氧烷退火制得的嵌入SiO_2基体中的高光致发光硅纳米晶体的光学性质

获取原文
获取原文并翻译 | 示例
           

摘要

Thin films of silicon nanocrystals embedded in SiO2 matrices were prepared by annealing a photoresist of hydrogen silsesquioxane. As compared to films made by a common method of annealing SiOx (1 < x < 2), significant enhancement on photoluminescence intensity was observed. Spectroscopic ellipsometry was applied to figure out optical properties of nc-Si made from HSQ. High-resolution tunneling electron microscopy, photoluminescence and absorption spectra were taken to either confirm the fitting results of SE or characterize structural, morphological and photoluminescent properties of all samples. The deduced refractive indices of nc-Si:SiO2 films made from HSQ were given. The influence of particle size and spatial distribution of nc-Si on the extinction coefficient K and PL spectra was observed and discussed.
机译:通过使氢倍半硅氧烷的光致抗蚀剂退火来制备嵌入在SiO 2基质中的硅纳米晶体的薄膜。与通过普通的SiOx退火方法(1

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号