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首页> 外文期刊>Optical Materials >Impact of composition and ex-situ laser irradiation on the structure and optical properties of As-S-based films synthesized by PECVD
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Impact of composition and ex-situ laser irradiation on the structure and optical properties of As-S-based films synthesized by PECVD

机译：成分和非原位激光辐照对PECVD合成As-S基薄膜结构和光学性能的影响

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摘要

Synthesis of amorphous chalcogenide As-S-based films with arsenic content from 35 to 55 at. % by a PECVD method is achieved. The composition-structure-optical properties relationship is revealed. Varying the composition of the films from As33S63 to As55S45 is accompanied by a change of the dominant structural units: from AsS3/2 pyramids to cage-like As4S4 and As4S3 units, causing a considerable decrease of the optical band gap from 2.42 to 1.87 eV. It has been found out that modification by a focused laser irradiation (473 nm) leads to formation of microanocrystalline inclusions feasible for applications in medicine, optoelectronics and integrated optics. The type of inclusions depends on the dominant structural units of the initial films. In case of the As(55)S(45 )film appearance of the dimorphite crystalline phase (alpha-As4S3) is observed. The ex-situ laser modification of the As-S films leads to appearance of a photoluminescence emission, and its maximum position shifts from 1.8 to 2.05 eV depending on the initial film stoichiometry.
机译：砷含量从35到55 at。的无定形硫族化物As-S基薄膜的合成。通过PECVD法获得的％。揭示了组成-结构-光学性质的关系。从As33S63到As55S45的膜组成变化伴随着主要结构单元的变化：从AsS3 / 2金字塔到笼状As4S4和As4S3单元，导致光学带隙从2.42到1.87 eV显着减小。已经发现，通过聚焦激光辐照（473nm）的改性导致形成微/纳米晶体夹杂物，其可适用于医学，光电子学和集成光学。夹杂物的类型取决于初始膜的主要结构单元。在As（55）S（45）膜的情况下，观察到双晶石结晶相（α-As4S3）的外观。 As-S膜的异位激光改性导致出现光致发光发射，并且其最大位置取决于初始膜化学计量，从1.8到2.05 eV。

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