Erratum to 'The effect of the intense laser field on the electronic states and optical properties of n-type double δ-doped GaAs quantum wells' [Opt. Mater. 64 (2017) 82-87]

Kasapoglu E.; Yesilgul U.; Ungan F.; Sokmen I.; Sari H.

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Erratum to 'The effect of the intense laser field on the electronic states and optical properties of n-type double δ-doped GaAs quantum wells' [Opt. Mater. 64 (2017) 82-87]

机译：关于“强激光场对n型双δ掺杂GaAs量子阱的电子态和光学性质的影响”勘误。

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来源
《Optical Materials》 |2018年第7期|140-140|共1页
作者
Kasapoglu E.; Yesilgul U.; Ungan F.; Sokmen I.; Sari H.;
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作者单位

Cumhuriyet Univ Fac Sci Dept Phys TR-58140 Sivas Turkey;

Cumhuriyet Univ Fac Technol Dept Opt Engn TR-58140 Sivas Turkey;

Dokuz Eylul Univ Fac Sci Dept Phys TR-35160 Izmir Turkey;

Cumhuriyet Univ Fac Educ Dept Primary TR-58140 Sivas Turkey;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
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1. Erratum to 'The effect of the intense laser field on the electronic states and optical properties of n-type double δ-doped GaAs quantum wells' [Opt. Mater. 64 (2017) 82-87] [J] . Kasapoglu E., Yesilgul U., Ungan F., Optical Materials . 2018,第jula期

机译：关于“强激光场对n型双δ掺杂GaAs量子阱的电子态和光学性质的影响”勘误。母校64（2017）82-87]
2. Nonlinear optical properties of asymmetric n-type double delta-doped GaAs quantum well under intense laser field? (vol 90, 162, 2017) [J] . Sari Huseyin, Kasapoglu Esin, Yesilgul Unal, The European physical journal, B. Condensed matter physics . 2018,第4期

机译：在激烈激光场下不对称n型双δ掺杂GaAs量子的非线性光学性能？（Vol 90,162,2017）
3. The effect of the intense laser field on the electronic states and optical properties of n-type double delta-doped GaAs quantum wells [J] . Kasapoglu E., Yesilgul U., Ungan F., Optical Materials . 2017,第Feba期

机译：强激光场对n型双δ掺杂GaAs量子阱的电子态和光学性质的影响
4. N-type modulation-doped strained InGaAs/AlGaAs quantum well lasers grown by metal organic chemical vapor deposition [C] . Hatori, N., Mukaihara, Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the . 2001

机译：通过金属有机化学气相沉积法生长的N型调制掺杂InGaAs / AlGaAs应变量子阱激光器
5. Electronic states in GaAs-(AlGa)As eccentric quantum rings under nonresonant intense laser and magnetic fields [O] . J. A. Vinasco, A. Radu, E. Niculescu, -1

机译：非共振强激光和磁场作用下GaAs-（AlGa）As偏心量子环中的电子态
6. The effects of the intense laser and homogeneous electric fields on the electronic and intraband optical properties of a GaAs/Ga0.7 Al0.3As quantum ring [O] . Radu, A., Kirakosyan, A.A., Laroze, D., 2015

机译：强激光和均匀电场对Gaas / Ga0.7 al0.3as量子环的电子和带内光学性质的影响
7. Relationship Between Photoluminescence Spectra and Low-Field ElectricalProperties of Modulation-Doped AlGaAs/GaAs Quantum Wells [R] . Dodabalapur, A., Sadra, K., Streetman, B. G. 1990

机译：调制掺杂alGaas / Gaas量子阱的光致发光光谱与低场电特性的关系

Erratum to 'The effect of the intense laser field on the electronic states and optical properties of n-type double δ-doped GaAs quantum wells' [Opt. Mater. 64 (2017) 82-87]

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